TIP31B-C datasheet, PDF - EEWORLD Datasheet

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TIP31B-C: DescriptionPower Bipolar Transistor; CategoryDiscrete semiconductor The transistor; File Size89KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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TIP31B-C Overview

Power Bipolar Transistor

TIP31B-C Parametric

Parameter Name	Attribute value
Maker	SECOS
package instruction	,
Reach Compliance Code	unknown

TIP31B-C Preview

TIP31 / TIP31A / TIP31B / TIP31C

Elektronische Bauelemente

NPN Plastic-Encapsulate Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead free

FEATURES

Medium Power Linear Switching Applications

TO-220J

ABSOLUTE MAXIMUM RATINGS

=25°C unless otherwise specified)

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current -Continuous

Cpllector Power Dissipation

Maximum Junction to Ambient

Junction, Storage Temperature

Symbol

CBO

CEO

EBO

θJA

, T

STG

Ratings

TIP31

TIP31A

62.5

150, -55~150

TIP31B

TIP31C

100

Unit

° /W

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

19-Sep-2011 Rev. A

Page 1 of 2

TIP31 / TIP31A / TIP31B / TIP31C

Elektronische Bauelemente

NPN Plastic-Encapsulate Transistor

ELECTRICAL CHARACTERISTICS

=25°C unless otherwise specified)

Parameter

TIP31

Collector - Base Breakdown TIP31A

Voltage

TIP31B

TIP31C

TIP31

Collector - Emitter

Breakdown Voltage

TIP31A

TIP31B

TIP31C

Emitter - Base Breakdown Voltage

TIP31

TIP31A

Collector Cut - Off Current

TIP31B

TIP31C

Collector Cut-Off

Current

TIP31 / TIP31A

TIP31B / TIP31C

CEO

EBO

CE(sat)

DC Current Gain

Collector - Emitter Saturation Voltage

Base – Emitter Voltage

Transition Frequency

Notes：

1. Pulse Test: PW≦300µs, Duty Cycle≦2%.

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

(BR)CBO

100

=1mA, I

(BR)CEO

100

=30mA, I

(BR)EBO

=1mA, I

=40V, I

CBO

200

µA

=60V, I

=80V, I

=100V, I

0.3

1.2

1.8

=30V, I

=60V, I

=5V, I

=4V, I

=1A

=4V, I

=3A

Emitter Cut-Off Current

MHz

=3A, I

=0.375A

=4V, I

=3A

=10V, I

=0.5A

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

19-Sep-2011 Rev. A

Page 2 of 2

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TIP31B-C Related Products

	TIP31B-C	TIP31A-C	TIP31-C	TIP31C-C
Description	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor	Power Bipolar Transistor
Maker	SECOS	SECOS	SECOS	SECOS
Reach Compliance Code	unknown	unknown	compliant	compliant

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