EEPROM, 8KX8, 200ns, Parallel, CMOS, CDIP28, 0.600 INCH, CERDIP-28
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Maker | Atmel (Microchip) |
Parts packaging code | DIP |
package instruction | DIP, DIP28,.6 |
Contacts | 28 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum access time | 200 ns |
Other features | AUTOMATIC WRITE |
command user interface | NO |
Data polling | YES |
JESD-30 code | R-GDIP-T28 |
JESD-609 code | e0 |
length | 37.25 mm |
memory density | 65536 bit |
Memory IC Type | EEPROM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 28 |
word count | 8192 words |
character code | 8000 |
Operating mode | ASYNCHRONOUS |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
organize | 8KX8 |
Output characteristics | 3-STATE |
Package body material | CERAMIC, GLASS-SEALED |
encapsulated code | DIP |
Encapsulate equivalent code | DIP28,.6 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | PARALLEL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
power supply | 5 V |
Programming voltage | 5 V |
Certification status | Not Qualified |
ready/busy | YES |
Maximum seat height | 5.72 mm |
Maximum standby current | 0.0001 A |
Maximum slew rate | 0.045 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 4.5 V |
Nominal supply voltage (Vsup) | 5 V |
surface mount | NO |
technology | CMOS |
Temperature level | INDUSTRIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
switch bit | NO |
width | 15.24 mm |
Maximum write cycle time (tWC) | 0.2 ms |