Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | TelCom Semiconductor, Inc. (Microchip Technology) |
Reach Compliance Code | unknown |
Configuration | Single |
Maximum drain current (Abs) (ID) | 0.05 A |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-609 code | e0 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 125 °C |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 0.3 W |
surface mount | NO |
Terminal surface | Tin/Lead (Sn/Pb) |