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EDI3DG328V10D1

Description
Synchronous DRAM Module, 8MX32, CMOS, SODIMM-144
Categorystorage    storage   
File Size97KB,3 Pages
ManufacturerWhite Microelectronics
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EDI3DG328V10D1 Overview

Synchronous DRAM Module, 8MX32, CMOS, SODIMM-144

EDI3DG328V10D1 Parametric

Parameter NameAttribute value
MakerWhite Microelectronics
package instruction,
Reach Compliance Codeunknown
access modeFOUR BANK PAGE BURST
Other featuresAUTO/SELF REFRESH
JESD-30 codeR-XDMA-N144
memory density268435456 bit
Memory IC TypeSYNCHRONOUS DRAM MODULE
memory width32
Number of functions1
Number of ports1
Number of terminals144
word count8388608 words
character code8000000
Operating modeSYNCHRONOUS
organize8MX32
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Certification statusNot Qualified
self refreshYES
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Terminal formNO LEAD
Terminal locationDUAL

EDI3DG328V10D1 Preview

EDI3DG328V
8Mx32 Synchronous DRAM SO-DIMM, 3.3V
FEATURES
s
Cycle time of 10ns, 12ns and 15ns
s
Packaging:
• 144 pin SO-DIMM (Package 396)
s
Burst Mode Operation (Sequential & Interleave)
s
Auto & Self Refresh Capability (4096 cycles /64ms)
s
LVTTL compatible inputs and outputs
s
MRS cycle with address key programs
s
Burst Length (1, 2, 4, 8 & Full Page)
s
Data Scramble
s
All inputs are sampled at the positive edge of the system clock
s
Serial Presence Detect with EEPROM
s
Single 3.3 Volts Operation
PIN CONFIGURATION
Pin Symbol Pin Symbol Pin Symbol
1
V
SS
2
V
SS
73
NC
3
DQ
0
4
DQ
32
75
V
SS
5
DQ
1
6
DQ
33
77
NC
7
DQ
2
8
DQ
34
79
NC
9
DQ
3
10
DQ
35
81
V
CC
11
V
CC
12
V
CC
83
NC
13
DQ
4
14
DQ
36
85
NC
15
DQ
5
16
DQ
37
87
NC
17
DQ
6
18
DQ
38
89
NC
19
DQ
7
20
DQ
39
91
V
SS
21
V
SS
22
V
SS
93
NC
23 DQM
0
24 DQM
4
95
NC
25 DQM
1
26 DQM
5
97
NC
27
V
CC
28
V
CC
99
NC
29
A
0
30
A
3
101
V
CC
31
A
1
32
A
4
103
A
6
33
A
2
34
A
5
105
A
8
35
V
SS
36
V
SS
107
V
SS
37
DQ
8
38
DQ
40
109
A
9
39
DQ
9
40
DQ
41
111 A
10
/AP
41 DQ
10
42
DQ
42
113
V
SS
43 DQ
11
44
DQ
43
115
NC
45
V
CC
46
V
CC
117
NC
47 DQ
12
48
DQ
44
119
V
SS
49 DQ
13
50
DQ
45
121
NC
51 DQ
14
52
DQ
46
123
NC
53 DQ
13
54
DQ
45
125
NC
55 DQ
14
56
DQ
46
127
NC
57
NC
58
NC
129
V
CC
59
NC
60
NC
131
NC
61 CLK
0
62 CKE
0
133
NC
63
V
CC
64
V
CC
135
NC
65 RAS\
66 CAS\
137
NC
67
WE\
68
NC
139
V
SS
69
CS
0
\
70 A
12
/NC 141 SDA
71
NC
72
NC
143
V
CC
NOTES:
1. A
12
(Pin 70) is NC when using 4 bank devices
2. BA
1
(Pin 110) is on C when using 2 bank devices
Pin Symbol
74 CLK
1
76
V
SS
78
NC
80
NC
82
V
CC
84
NC
86
NC
88
NC
90
NC
92
V
SS
94
NC
96
NC
98
NC
100
NC
102
V
CC
104
A
7
106
A
9
108
V
SS
110 BA
1
112
A
11
114
V
CC
116
NC
118
NC
120
V
SS
122
NC
124
NC
126
NC
128
NC
130
V
CC
132
NC
134
NC
136
NC
138
NC
140
V
SS
142 SCL
144
V
CC
The EDI3DG328V are organized as 8Megx32 Synchronous high
density DRAM Modules which are based on 4 CMOS 8Megx8bit
DRAMs with 2 or 4 banks in a TSOP package which are mounted
on an FR4 substrate. The module also includes a serial EEPROM
in an 8-pin TSOP package.
The module is a 144 Pin Small Outline Dual In-Line Memory
module with gold contacts.
PIN DESCRIPTION
A
0-12
BA
0-1
DQ
0-15
,
DQ
32-47
CLK-CKL
1
RAS\
CAS\
CKE
0
DQM
0
,
1
,
4
,
5
CS
0
\
WE\
SDA
SCL
V
CC
V
SS
NC
Address lines
Bank Select
Data Input/Output
Clock Input
Row Address Strobe
Column Address Strobe
Clock Enable Input
DQM
Chip Select Input
Write Enable
Serial Data I/O
Serial Clock
Power Supply
Ground
No Connection
NOTE:
DQMs vs Data I/Os
DQM
0
controls DQ
0-7
DQM
1
controls DQ
8-15
DQM
4
controls DQ
32-39
DQM
5
controls DQ
40-47
January 1998 Rev. 0
1
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com
EDI3DG328V
BLOCK DIAGRAM
BA
0-1
CS
0
\
CKE
0
WE\
RAS\
CAS\
DQ
0-7
DQ
32-39
DQM
0
DQM
4
DQ
8-15
DQ
40-47
DQM
1
CLK
0
10 Ohm
SCL
DQM
5
CLK
1
10 Ohm
SERIAL PD
EEPROM
SDA
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com
2
EDI3DG328V
PACKAGE DESCRIPTION:
Package No. 396
4.06 (0.160)
MAX.
67.75 (2.667)
67.45 (2.656)
2.00 (0.079) R
(2X)
144 PIN SO-DIMM
1.80 (0.071)
(2X)
28.07 (1.105)
20.00 (0.787) MAX
TYP
6.00 (0.236)
1.50 (0.059)
TYP
2.00 (0.079)
PIN 1
1.10 (0.043)
0.60 (0.024)
TYP
60.60 (2.386)
63.60 (2.504)
0.80 (0.032)
TYP
4.00 (0.157)
0.90 (0.035)
2.22 (0.100)
3.30 (0.83)
ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES
ORDERING INFORMATION
Part Number
EDI3DG328V8D1
EDI3DG328V10D1
EDI3DG328V12D1
Organization
8M x 32 (4 bank SDRAMS)
8M x 32 (4bank SDRAMS)
8M x 32 (4 bank SDRAMS)
Operating
Frequency
125 Mhz
100 Mhz
83 Mhz
Package No.
396
396
396
3
White Electronic Designs Corporation • (508) 366-5151 • www.whiteedc.com

EDI3DG328V10D1 Related Products

EDI3DG328V10D1 EDI3DG328V8D1 EDI3DG328V12D1
Description Synchronous DRAM Module, 8MX32, CMOS, SODIMM-144 Synchronous DRAM Module, 8MX32, CMOS, SODIMM-144 Synchronous DRAM Module, 8MX32, CMOS, SODIMM-144
Maker White Microelectronics White Microelectronics White Microelectronics
Reach Compliance Code unknown unknown unknown
access mode FOUR BANK PAGE BURST FOUR BANK PAGE BURST FOUR BANK PAGE BURST
Other features AUTO/SELF REFRESH AUTO/SELF REFRESH AUTO/SELF REFRESH
JESD-30 code R-XDMA-N144 R-XDMA-N144 R-XDMA-N144
memory density 268435456 bit 268435456 bit 268435456 bit
Memory IC Type SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE SYNCHRONOUS DRAM MODULE
memory width 32 32 32
Number of functions 1 1 1
Number of ports 1 1 1
Number of terminals 144 144 144
word count 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000
Operating mode SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
organize 8MX32 8MX32 8MX32
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
Certification status Not Qualified Not Qualified Not Qualified
self refresh YES YES YES
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V
surface mount NO NO NO
technology CMOS CMOS CMOS
Terminal form NO LEAD NO LEAD NO LEAD
Terminal location DUAL DUAL DUAL

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