HGTP5N120CNS datasheet, PDF - EEWORLD Datasheet

HGTP5N120CNS: DescriptionTRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,25A I(C),TO-263AB; CategoryDiscrete semiconductor The transistor; File Size620KB，10 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HGTP5N120CNS Overview

TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,25A I(C),TO-263AB

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Reach Compliance Code	not_compliant
Maximum collector current (IC)	25 A
Collector-emitter maximum voltage	1200 V
Maximum landing time (tf)	350 ns
Gate-emitter maximum voltage	20 V
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	167 W
Maximum rise time (tr)	16 ns
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)

	HGTP5N120CNS	HGTP5N120CNS9A
Description	TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,25A I(C),TO-263AB	TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,25A I(C),TO-263AB
Is it Rohs certified?	incompatible	incompatible
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
Reach Compliance Code	not_compliant	not_compliant
Maximum collector current (IC)	25 A	25 A
Collector-emitter maximum voltage	1200 V	1200 V
Maximum landing time (tf)	350 ns	350 ns
Gate-emitter maximum voltage	20 V	20 V
JESD-609 code	e0	e0
Maximum operating temperature	150 °C	150 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	167 W	167 W
Maximum rise time (tr)	16 ns	16 ns
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)

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