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M59DR032EB12ZF6F

Description
2MX16 FLASH 1.8V PROM, 120ns, PBGA48, 7 X 7 MM, 0.75 MM PITCH, TFBGA-48
Categorystorage    storage   
File Size370KB,43 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M59DR032EB12ZF6F Overview

2MX16 FLASH 1.8V PROM, 120ns, PBGA48, 7 X 7 MM, 0.75 MM PITCH, TFBGA-48

M59DR032EB12ZF6F Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instruction7 X 7 MM, 0.75 MM PITCH, TFBGA-48
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time120 ns
startup blockBOTTOM
JESD-30 codeS-PBGA-B48
JESD-609 codee1
length7 mm
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals48
word count2097152 words
character code2000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTFBGA
Package shapeSQUARE
Package formGRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
Programming voltage1.8 V
Certification statusNot Qualified
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)2.2 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formBALL
Terminal pitch0.75 mm
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
width7 mm
M59DR032EA
M59DR032EB
32 Mbit (2Mb x 16, Dual Bank, Page )
1.8V Supply Flash Memory
FEATURES SUMMARY
s
SUPPLY VOLTAGE
– V
DD
= V
DDQ
= 1.65V to 2.2V for Program,
Erase and Read
s
Figure 1. Packages
– V
PP
= 12V for fast Program (optional)
ASYNCHRONOUS PAGE MODE READ
– Page Width: 4 Words
– Page Access: 35ns
– Random Access: 85ns, 100ns and 120ns
BGA
s
PROGRAMMING TIME
– 10µs by Word typical
– Double Word Program Option
TFBGA48 (ZB)
7 x 12mm
s
MEMORY BLOCKS
– Dual Bank Memory Array: 4 Mbit, 28 Mbit
– Parameter Blocks (Top or Bottom location)
BGA
s
DUAL BANK OPERATIONS
– Read within one Bank while Program or
Erase within the other
– No delay between Read and Write operations
TFBGA48 (ZF)
s
BLOCK LOCKING
– All blocks locked at Power up
– Any combination of blocks can be locked
– WP for Block Lock-Down
7 x 7mm
s
COMMON FLASH INTERFACE (CFI)
– 64 bit Unique Device Identifier
– 64 bit User Programmable OTP Cells
s
s
ERASE SUSPEND and RESUME MODES
100,000 PROGRAM/ERASE CYCLES per
BLOCK
20 YEARS DATA RETENTION
– Defectivity below 1ppm/year
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code, M59DR032EA: 00A0h
– Bottom Device Code, M59DR032EB: 00A1h
s
s
April 2003
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