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MT29F4G08AAAWCET:A

Description
Flash, 512MX8, 30ns, PDSO48, TSOP1-48
Categorystorage    storage   
File Size2MB,81 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
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MT29F4G08AAAWCET:A Overview

Flash, 512MX8, 30ns, PDSO48, TSOP1-48

MT29F4G08AAAWCET:A Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
Parts packaging codeTSOP1
package instructionTSOP1-48
Contacts48
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time30 ns
command user interfaceYES
Data pollingNO
JESD-30 codeR-PDSO-G48
JESD-609 codee3
length18.4 mm
memory density4294967296 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of departments/size4K
Number of terminals48
word count536870912 words
character code512000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512MX8
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size2K words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size128K
Maximum standby current0.00005 A
Maximum slew rate0.035 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature30
switch bitNO
typeSLC NAND TYPE
width12 mm
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Features
NAND Flash Memory
MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA
Features
• Single-level cell (SLC) technology
• Organization
Page size x8: 2,112 bytes (2,048 + 64 bytes)
Block size: 64 pages (128K + 4K bytes)
Plane size: 2,048 blocks
Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks;
16Gb: 16,384 blocks
• READ performance
Random READ: 25µs (MAX)
Sequential READ: 25ns (MIN)
• WRITE performance
PROGRAM PAGE: 220µs (TYP)
BLOCK ERASE: 1.5ms (TYP)
• Data retention: 10 years
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
valid up to 1,000 PROGRAM/ERASE cycles
1
• Industry-standard basic NAND Flash command set
• Advanced command set:
PROGRAM PAGE CACHE MODE
PAGE READ CACHE MODE
One-time programmable (OTP) commands
Two-plane commands
Interleaved die operations
READ UNIQUE ID (contact factory)
READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
Operation completion
Pass/fail condition
Write-protect status
• Ready/busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: write protect entire device
• RESET required after power-up
• INTERNAL DATA MOVE operations supported
within the plane from which data is read
Figure 1:
48-Pin TSOP Type 1
Options
• Density
2
4Gb (single die)
8Gb (dual-die stack 1 CE#)
8Gb (dual-die stack 2 CE#)
16Gb (quad-die stack)
• Device width: x8
• Configuration
# of die
# of CE# # of R/B#
I/O
1
1
1
Common
2
1
1
Common
2
2
2
Common
4
2
2
Common
• V
CC
: 2.7–3.6V
• Package
48 TSOP type I (lead-free plating)
48 TSOP type I OCPL
3
(lead-free plating)
• Operating temperature
Commercial (0°C to +70°C)
Extended (–40°C to +85°C)
4
Notes: 1. For further details, see “Error Management”
on page 58.
2. For part numbering and markings, see
Figure 2 on page 2.
3. OCPL = off-center parting line.
4. For ET devices, contact factory.
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__1.fm - Rev. B 2/07 EN
Products and specifications discussed herein are subject to change by Micron without notice.

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