DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
µ
PA845TC
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD
FEATURES
• Ideal for 3.6 to 4.2 GHz oscillation application
• 2 different built-in transistors (2SC5603, 2SC5668)
Q1: 13.5 GHz f
T
high-gain transistor
f
T
= 13.5 GHz TYP.,
S
21e
2
= 10.0 dB TYP. @ V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
Q2: 21.0 GHz f
T
high-gain transistor
f
T
= 21.0 GHz TYP.,
S
21e
2
= 11.5 dB TYP. @ V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
• Flat-lead 6-pin thin-type ultra super minimold package
BUILT-IN TRANSISTORS
Q1
3-pin thin-type ultra super minimold part No.
2SC5603
Q2
2SC5668
ORDERING INFORMATION
Part Number
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base)
face the perforation side of the tape
µ
PA845TC
µ
PA845TC-T1
Remark
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15281EJ1V0DS00 (1st edition)
Date Published February 2001 NS CP(K)
Printed in Japan
©
2001
µ
PA845TC
ABSOLUTE MAXIMUM RATINGS (T
A
= +25°C)
°
Parameter
Symbol
Q1
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
V
CBO
V
CEO
V
EBO
I
C
P
tot
Note
Ratings
Q2
15
3.3
1.5
35
115
Unit
15
6
2
35
200
V
V
V
mA
mW
230 in 2 elements
Junction Temperature
Storage Temperature
T
j
T
stg
150
−65
to +150
°C
°C
2
Note
Mounted on 1.08 cm
×
1.0 mm (t) glass epoxy substrate
2
Data Sheet P15281EJ1V0DS
µ
PA845TC
ELECTRICAL CHARACTERISTICS (T
A
= +25°C)
°
(1) Q1
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain
Noise Figure
Reverse Transfer Capacitance
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 1 V, I
C
= 5 mA
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
MIN.
−
−
60
12.0
8.5
−
−
TYP.
−
−
90
13.5
10.0
1.3
0.25
MAX.
200
200
120
−
−
2.5
0.5
Unit
nA
nA
−
GHz
dB
dB
pF
f
T
S
21e
NF
C
re
Note 2
2
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 0.5 V, I
E
= 0 mA, f = 1 MHz
(2) Q2
Parameter
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure
Reverse Transfer Capacitance
Maximum Available Power Gain
Maximum Stable Power Gain
Symbol
I
CBO
I
EBO
h
FE
Note 1
Test Conditions
V
CB
= 5 V, I
E
= 0 mA
V
BE
= 1 V, I
C
= 0 mA
V
CE
= 2 V, I
C
= 5 mA
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
MIN.
−
−
50
18.0
9.0
8.5
−
−
–
–
TYP.
−
−
70
21.0
11.5
11.0
1.1
0.24
12.5
13.5
MAX.
100
100
100
−
−
−
1.5
0.3
–
–
Unit
nA
nA
−
GHz
dB
dB
dB
pF
dB
dB
f
T
S
21e
S
21e
NF
C
re
Note 2
2
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 1 V, I
C
= 10 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 5 mA, f = 2 GHz,
Z
S
= Z
opt
V
CB
= 2 V, I
E
= 0 mA, f = 1 MHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
V
CE
= 2 V, I
C
= 20 mA, f = 2 GHz
2
MAG
MSG
Note 3
Note 4
Notes 1.
Pulse measurement: PW
≤
350
µ
s, Duty Cycle
≤
2%
2.
Collector to base capacitance measured using capacitance meter (self-balancing bridge method) when
the emitter is connected to the guard pin
3.
MAG =
4.
MSG =
S
21
(K –
√
(K
2
– 1) )
S
12
S
21
S
12
h
FE
CLASSIFICATION
Rank
Marking
h
FE
Value of Q1
h
FE
Value of Q2
FB
2E
60 to 120
50 to 100
Data Sheet P15281EJ1V0DS
3
µ
PA845TC
TYPICAL CHARACTERISTICS (Unless otherwise specified, T
A
= +25°C)
°
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
Total Power Dissipation P
tot
(mW)
250
230
200
Q1
150
115
100
50
Q2
Mounted on Glass Epoxy Board
(1.08 cm
2
×
1.0 mm (t) )
2 Elements in total
0
25
50
75
100
125
150
Ambient Temperature T
A
(˚C)
Q1
Q2
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
Reverse Transfer Capacitance C
re
(pF)
Reverse Transfer Capacitance C
re
(pF)
0.5
f = 1 MHz
0.4
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
f = 1 MHz
0.4
0.3
0.3
0.2
0.2
0.1
0.1
0
2
4
6
8
10
0
2
4
6
8
10
Collector to Base Voltage V
CB
(V)
Collector to Base Voltage V
CB
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
35
V
CE
= 1 V
30
30
35
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 2 V
Collector Current I
C
(mA)
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
Collector Current I
C
(mA)
25
20
15
10
5
0
0.2
0.4
0.6
0.8
1.0
Base to Emitter Voltage V
BE
(V)
Base to Emitter Voltage V
BE
(V)
Data Sheet P15281EJ1V0DS
4
µ
PA845TC
Q1
Q2
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
460
µ
A
410
µ
A
360
µ
A
310
µ
A
260
µ
A
20
210
µ
A
160
µ
A
110
µ
A
10
60
µ
A
I
B
= 10
µ
A
0
1
2
3
4
5
6
7
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
500
µ
A
450
µ
A
400
µ
A
350
µ
A
300
µ
A
250
µ
A
200
µ
A
10
150
µ
A
100
µ
A
I
B
= 50
µ
A
0
1
2
3
4
Collector Current I
C
(mA)
Collector Current I
C
(mA)
30
30
20
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
V
CE
= 1 V
1 000
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 2 V
DC Current Gain h
FE
100
DC Current Gain h
FE
1
10
100
100
10
0.1
10
0.1
1
10
100
Collector Current I
C
(mA)
Collector Current I
C
(mA)
Data Sheet P15281EJ1V0DS
5
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