MCC
Micro Commercial Components
RS1001M
TM
omponents
20736 Marilla Street Chatsworth
!"#
$
% !"#
THRU
RS1007M
10 Amp Single Phase
Silicon Bridge
Rectifier
50 to 1000 Volts
RS-10M
A
I
K
J
L
D
B
M
E
F
G
H
H
H
C
N
•
•
•
•
•
•
Features
Low Leakage
Low Forward Voltage
Mounting position: Any
Surge overload rating: 200 amperes peak
Silver-plated copper leads
UL Recognized File # E165989
Maximum Ratings
•
•
•
•
•
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Typical Thermal Resistance: 26°C/W Junction to Ambient
Typical Thermal Resistance: 2.3°C/W Junction to Case
Typical Thermal Resistance: 6°C/W Junction to Lead
Microsemi
Catalog
Number
RS1001M
RS1002M
RS1003M
RS1004M
RS1005M
RS1006M
RS1007M
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
I
F(AV)
I
FSM
10 A
200 A
Maximum
RMS
Voltage
35V
70V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
200V
400V
600V
800V
1000V
RS1001M
RS1002M
RS1003M
RS1004M
RS1005M
RS1006M
RS1007M
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
Peak Forward Surge
Current
Maximum Forward
Voltage Drop Per
Element
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
T
C
= 100°C
8.3ms, half sine
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
INCHES
MIN
.983
.578
.669
.157
.130
.059
.035
.287
.173
.366
.134
.122
.098
.023
DIMENSIONS
MM
MIN
MAX
24.70
25.30
14.70
15.30
17.00
17.00
4.00
3.30
3.70
1.50
1.90
0.90
1.10
7.30
7.70
4.40
4.80
9.30
9.70
3.40
3.80
3.10
3.40
2.50
2.90
0.60
0.80
V
F
1.1V
I
FM
= 5.0A;
T
A
= 25°C*
T
A
= 25°C
T
C
= 100°C
MAX
.995
.602
.708
.146
.074
.043
.303
.189
.382
.150
.134
.114
.031
NOTE
I
R
5.0
µA
0.2 mA
*Pulse test: Pulse width 300
µsec,
Duty cycle 1%
Revision: 5
www.mccsemi.com
2004/09/16
RS1001M THRU RS1007M
MCC
Micro Commercial Components
POWER DISSIPATION
34
POWER DISSIPATION PF(W)
sine wave
Tj=150
TM
INSTANTANEOUS FORWARD CURRENT, (A)
TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
30
20
10
5
2
1
0.5
0.2
0.1
0.4
0.5
0.6
0.7
0.8
0.9
pulse test
per one diode
T
C
= 150
(TYP)
T
C
= 25
(TYP)
30
20
10
0
1
1.1
1.2
0
2
4
6
8
10
12
14
INSTANTANEOUS FORWARD VOLTAGE, (V)
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
SURGE FORWARD CURRENT CAPABILITY
PEAK FORWARD SURGE CURRENT, (A)
sine wave
0
I
FSM
TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
200
180
160
140
120
100
80
60
1
3
on glass-epoxi substrate
8.3ms 8.3ms
1 cycle
non-repetitive
Tj=25
2
P.C.B
sine wave
R-load
free in air
1
2
5
10
20
NUMBER OF CYCLE
50
100
0
0
40
80
120
)
160
AMBIENT TEMPERATURE, (
TYPICAL FORWARD CURRENT
DERATING CURVE
12
AVERAGE FORWARD CURRENT, (A)
heatsink
Tc
Tc
CONTACT THERMAL RESISTANCE fcf
1.6
1.5
1.4
1.3
with thermal compound
6
4
2
0
80
sine wave
R-load
on heatsink
THERMAL RESISTANCE (
8
/W )
10
1.2
1.1
1
90
100 110 120 130 140 150 160
CASE TEMPERATURE, (
)
2
3
4
5
6
7
8
MOUNTING TORQUE (Kg.cm)
Revision: 5
www.mccsemi.com
2004/09/15
京公网安备 11010802033920号
EEWORLD
