1.5A, 60V, 0.36ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, POWERFLEX, PFM, 9 PIN
Parameter Name | Attribute value |
Brand Name | Texas Instruments |
Is it lead-free? | Contains lead |
Maker | Texas Instruments |
package instruction | SMALL OUTLINE, R-PSSO-G9 |
Contacts | 9 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Factory Lead Time | 1 week |
Other features | ESD PROTECTED |
Avalanche Energy Efficiency Rating (Eas) | 36 mJ |
Configuration | COMPLEX |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (Abs) (ID) | 1.5 A |
Maximum drain current (ID) | 1.5 A |
Maximum drain-source on-resistance | 0.36 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PSSO-G9 |
Number of components | 4 |
Number of terminals | 9 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power dissipation(Abs) | 1.7 W |
Maximum pulsed drain current (IDM) | 6 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |