WESTCODE
An
Date:- 29 Apr, 2004
Data Sheet Issue:- 1
IXYS
Company
Fast Recovery Diode
Type M2639Z#360 to M2639Z#420
Old Type No.: SM36-42C/DXC954
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
3600-4200
3700-4300
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
It
It
T
j op
T
stg
2
2
MAXIMUM
LIMITS
2639
1732
1061
4922
4317
27520
30270
3.79×10
4.58×10
6
6
UNITS
A
A
A
A
A
A
A
As
As
°C
°C
2
2
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 2)
Maximum average forward. T
sink
=100°C, (note 3)
Nominal RMS forward current, T
sink
=25°C, (note 2)
D.C. forward current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
RM
=60% V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
RM
=60% V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
RM
≤10V,
(note 5)
2
2
Operating temperature range
Storage temperature range
-40 to +150
-40 to +150
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 150°C T
j
initial.
Data Sheet. Types M2639Z#360 to M2639Z#420 Issue 1
Page 1 of 11
April, 2004
WESTCODE
An IXYS Company
Characteristics
Fast Recovery Diode Types M2639Z#360 to M2639Z#420
PARAMETER
V
FM
V
T0
r
T
V
FRM
I
RRM
Q
rr
Q
ra
I
rm
t
rr
R
thJK
F
W
t
Maximum peak forward voltage
Threshold voltage
Slope resistance
Maximum forward recovery voltage
Peak reverse current
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time, 50% Chord
Thermal resistance, junction to heatsink
Mounting force
Weight
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
37
-
-
TYP.
-
-
-
-
-
-
-
2300
1200
280
8.5
-
-
-
1.7
1.2
MAX. TEST CONDITIONS
(Note 1)
2.25
2.9
1.38
0.29
40
80
150
-
1600
-
-
0.011
0.022
47
-
-
Outline option ZC
Outline option ZD
Double side cooled
Single side cooled
I
FM
=1000A, t
p
=1000µs, di/dt=60A/µs,
V
r
=50V, 50% Chord.
di/dt = 1000A/µs, T
j
=25°C
di/dt = 1000A/µs
Rated V
RRM
I
FM
=3000A
I
FM
=5278A
UNITS
V
V
mΩ
V
V
mA
µC
µC
A
µs
K/W
kN
kg
Notes:-
1) Unless otherwise indicated T
j
=150°C.
Data Sheet. Types M2639Z#360 to M2639Z#420 Issue 1
Page 2 of 11
April, 2004
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
36
38
40
42
V
RRM
(V)
3600
3800
4000
4200
Fast Recovery Diode Types M2639Z#360 to M2639Z#420
V
RSM
(V)
3700
3900
4100
4300
V
R
dc
(V)
1900
1950
2000
2040
2.0 De-rating Factor
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T
j
below 25°C.
3.0 ABCD Constants
These constants (applicable only over current range of V
F
characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
V
F
=
A
+
B
⋅
ln(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
where I
F
= instantaneous forward current.
4.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in Fig.(a) below.
(ii) Q
rr
is based on a 150µs integration time.
150
µ
s
I.e.
Q
rr
=
∫
i
0
rr
.
dt
(iii)
t
1
K Factor
=
t
2
Data Sheet. Types M2639Z#360 to M2639Z#420 Issue 1
Page 3 of 11
April, 2004
WESTCODE
An IXYS Company
5.0 Reverse Recovery Loss
Fast Recovery Diode Types M2639Z#360 to M2639Z#420
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
T
SINK
=
T
j
(
MAX
)
−
E
⋅
k
+
f
⋅
R
th
(
JK
)
Where
k
= 0.2314 (°C/W)/s
[
]
E
= Area under reverse loss waveform per pulse in joules (W.s.)
f
= Rated frequency in Hz at the original sink temperature.
R
th(JK)
= d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W
(
tot
)
=
W
(
original
)
+
E
⋅
f
NOTE 1 - Reverse Recovery Loss by Measurement
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:
R
2
=
4
⋅
Where:
V
r
C
S
⋅
di dt
V
r
= Commutating source voltage
C
S
= Snubber capacitance
R = Snubber resistance
6.0 Snubber Components
When selecting snubber components, care must be taken not to use excessively large values of snubber
capacitor or excessively small values of snubber resistor. Such excessive component values may lead to
device damage due to the large resultant values of snubber discharge current. If required, please consult
the factory for assistance.
Data Sheet. Types M2639Z#360 to M2639Z#420 Issue 1
Page 4 of 11
April, 2004
WESTCODE
An IXYS Company
7.0 Computer Modelling Parameters
7.1 Device Dissipation Calculations
Fast Recovery Diode Types M2639Z#360 to M2639Z#420
I
AV
−
V
T
0
+
V
T
0
+
4
⋅
ff
2
⋅
r
T
⋅
W
AV
=
2
⋅
ff
2
⋅
r
T
Where
V
T0
= 1.38V,
r
T
= 0.29mΩ
ff
= form factor (normally unity for fast diode applications)
W
AV
=
∆
T
R
th
∆
T
=
T
j
(
MAX
)
−
T
K
7.2 Calculation of V
F
using ABCD Coefficients
The forward characteristic I
F
Vs V
F
, on page 6 is represented in two ways;
(i)
the well established V
T0
and r
T
tangent used for rating purposes and
(ii)
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
F
in
terms of I
F
given below:
V
F
=
A
+
B
⋅
ln(
I
F
)
+
C
⋅
I
F
+
D
⋅
I
F
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for V
F
agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
A
B
C
D
8.0 Frequency Ratings
The curves illustrated in figures 8 to 16 are for guidance only and are superseded by the maximum ratings
shown on page 1.
9.0 Square wave ratings
These ratings are given for load component rate of rise of forward current of 100 and 500 A/µs.
10.0 Duty cycle lines
The 100% duty cycle is represented on all the ratings by a straight line. Other duties can be included as
parallel to the first.
0.66351
0.0761242
5.385×10
-5
150°C Coefficients
0.64845
1.51817×10
-3
-5
7.990907×10
0.02464763
0.01454956
Data Sheet. Types M2639Z#360 to M2639Z#420 Issue 1
Page 5 of 11
April, 2004
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