VN2222LL datasheet, PDF - EEWORLD Datasheet

VN2222LL: Description230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92; CategoryDiscrete semiconductor The transistor; File Size19KB，2 Pages; ManufacturerCalogic; Websitehttp://www.calogic.net/

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230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-W3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	0.099 A
Maximum drain current (ID)	0.23 A
Maximum drain-source on-resistance	7.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	5 pF
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	0.4 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	VN2222LL	VN2222LM	VN2222
Description	230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92	230 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
Number of components	1	1	1
Number of terminals	3	3	3
Terminal form	WIRE	WIRE	THROUGH-hole
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	switch
Transistor component materials	SILICON	SILICON	silicon
Is it Rohs certified?	incompatible	incompatible	-
Parts packaging code	TO-92	TO-237AA	-
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	-
Contacts	3	3	-
Reach Compliance Code	compli	unknow	-
ECCN code	EAR99	EAR99	-
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	-
Minimum drain-source breakdown voltage	60 V	60 V	-
Maximum drain current (Abs) (ID)	0.099 A	0.25 A	-
Maximum drain current (ID)	0.23 A	0.26 A	-
Maximum drain-source on-resistance	7.5 Ω	7.5 Ω	-
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	-
Maximum feedback capacitance (Crss)	5 pF	5 pF	-
JEDEC-95 code	TO-92	TO-237AA	-
JESD-30 code	O-PBCY-W3	O-PBCY-W3	-
JESD-609 code	e0	e0	-
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-
Maximum operating temperature	150 °C	150 °C	-
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-
Package shape	ROUND	ROUND	-
Package form	CYLINDRICAL	CYLINDRICAL	-
Polarity/channel type	N-CHANNEL	N-CHANNEL	-
Maximum power dissipation(Abs)	0.4 W	1 W	-
Certification status	Not Qualified	Not Qualified	-
surface mount	NO	NO	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Base Number Matches	1	1	-

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