EEPROM, 4KX8, Serial, CMOS, PDIP8, DIP-8
Parameter Name | Attribute value |
Maker | SAMSUNG |
Parts packaging code | DIP |
package instruction | DIP, DIP8,.3 |
Contacts | 8 |
Reach Compliance Code | compliant |
ECCN code | EAR99 |
Maximum clock frequency (fCLK) | 0.4 MHz |
Data retention time - minimum | 100 |
Durability | 1000000 Write/Erase Cycles |
I2C control byte | 1010DDDR |
JESD-30 code | R-PDIP-T8 |
length | 9.2 mm |
memory density | 32768 bit |
Memory IC Type | EEPROM |
memory width | 8 |
Number of functions | 1 |
Number of terminals | 8 |
word count | 4096 words |
character code | 4000 |
Operating mode | SYNCHRONOUS |
Maximum operating temperature | 70 °C |
Minimum operating temperature | -25 °C |
organize | 4KX8 |
Package body material | PLASTIC/EPOXY |
encapsulated code | DIP |
Encapsulate equivalent code | DIP8,.3 |
Package shape | RECTANGULAR |
Package form | IN-LINE |
Parallel/Serial | SERIAL |
power supply | 2/5 V |
Certification status | Not Qualified |
Maximum seat height | 5.08 mm |
Serial bus type | I2C |
Maximum standby current | 0.000001 A |
Maximum slew rate | 0.003 mA |
Maximum supply voltage (Vsup) | 5.5 V |
Minimum supply voltage (Vsup) | 1.8 V |
Nominal supply voltage (Vsup) | 2.5 V |
surface mount | NO |
technology | CMOS |
Temperature level | OTHER |
Terminal form | THROUGH-HOLE |
Terminal pitch | 2.54 mm |
Terminal location | DUAL |
width | 7.62 mm |
Maximum write cycle time (tWC) | 5 ms |
write protect | HARDWARE |