UPA2733GR-E2 datasheet, PDF - EEWORLD Datasheet

UPA2733GR-E2: Description5A, 30V, 0.053ohm, P-CHANNEL, Si, POWER, MOSFET, POWER SOP-8; CategoryDiscrete semiconductor The transistor; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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UPA2733GR-E2 Overview

5A, 30V, 0.053ohm, P-CHANNEL, Si, POWER, MOSFET, POWER SOP-8

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	SOT
package instruction	POWER SOP-8
Contacts	8
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (Abs) (ID)	5 A
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	0.053 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8
Humidity sensitivity level	1
Number of components	1
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	2.5 W
Maximum pulsed drain current (IDM)	20 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

	UPA2733GR-E2	UPA2733GR-E1
Description	5A, 30V, 0.053ohm, P-CHANNEL, Si, POWER, MOSFET, POWER SOP-8	5A, 30V, 0.053ohm, P-CHANNEL, Si, POWER, MOSFET, POWER SOP-8
Is it Rohs certified?	incompatible	incompatible
Maker	Renesas Electronics Corporation	Renesas Electronics Corporation
Parts packaging code	SOT	SOT
package instruction	POWER SOP-8	SMALL OUTLINE, R-PDSO-G8
Contacts	8	8
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V	30 V
Maximum drain current (Abs) (ID)	5 A	5 A
Maximum drain current (ID)	5 A	5 A
Maximum drain-source on-resistance	0.053 Ω	0.053 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-G8	R-PDSO-G8
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	225	225
Polarity/channel type	P-CHANNEL	P-CHANNEL
Maximum power dissipation(Abs)	2.5 W	2.5 W
Maximum pulsed drain current (IDM)	20 A	20 A
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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