Transistors with built-in Resistor
UNR211x Series
(UN211x Series)
Silicon PNP epitaxial planar type
Unit: mm
For digital circuits
■
Features
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts
•
Mini type package allowing easy automatic insertion through tape
packing and magazine packing
1
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
2
(0.65)
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
■
Resistance by Part Number
•
UNR2110
•
UNR2111
•
UNR2112
•
UNR2113
•
UNR2114
•
UNR2115
•
UNR2116
•
UNR2117
•
UNR2118
•
UNR2119
•
UNR211D
•
UNR211E
•
UNR211F
•
UNR211H
•
UNR211L
•
UNR211M
•
UNR211N
•
UNR211T
•
UNR211V
•
UNR211Z
Marking Symbol (R
1
)
(UN2110)
6L
47 kΩ
(UN2111)
6A
10 kΩ
(UN2112)
6B
22 kΩ
(UN2113)
6C
47 kΩ
(UN2114)
6D
10 kΩ
(UN2115)
6E
10 kΩ
(UN2116)
6F
4.7 kΩ
(UN2117)
6H
22 kΩ
(UN2118)
6I
0.51 kΩ
(UN2119)
6K
1 kΩ
(UN211D)
6M
47 kΩ
(UN211E)
6N
47 kΩ
(UN211F)
6O
4.7 kΩ
(UN211H)
6P
2.2 kΩ
(UN211L)
6Q
4.7 kΩ
(UN211M) EI
2.2 kΩ
(UN211N)
EW
4.7 kΩ
(UN211T)
EY
22 kΩ
(UN211V)
FC
2.2 kΩ
(UN211Z)
FE
4.7 kΩ
(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
10 kΩ
22 kΩ
10 kΩ
10 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
22 kΩ
10˚
1.1
+0.2
–0.1
1.1
+0.3
–0.1
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
Internal Connection
R
1
B
R
2
E
C
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Rating
−50
−50
−100
200
150
−55
to
+150
Unit
V
V
mA
mW
°C
°C
Note) The part numbers in the parenthesis show conventional part number.
Publication date: December 2003
SJH00006CED
0 to 0.1
0.4
±0.2
5˚
1
UNR211x Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base
UNR2110/2115/2116/2117
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Conditions
I
C
= −10 µA,
I
E
=
0
I
C
= −2
mA, I
B
=
0
V
CB
= −50
V, I
E
=
0
V
CE
= −50
V, I
B
=
0
V
EB
= −6
V, I
C
=
0
Min
−50
−50
−
0.1
−
0.5
−
0.01
−
0.1
−
0.2
−
0.4
−
0.5
−1.0
−1.5
−2.0
h
FE
V
CE
= −10
V, I
C
= −5
mA
6
20
30
35
60
60
80
80
160
V
CE(sat)
V
OH
V
OL
I
C
= −10
mA, I
B
= −
0.3 mA
I
C
= −10
mA, I
B
= −1.5
mA
V
CC
= −5
V, V
B
= −
0.5 V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −2.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −3.5
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −10
V, R
L
=
1 kΩ
V
CC
= −5
V, V
B
= −6
V, R
L
=
1 kΩ
f
T
V
CB
= −10
V, I
E
=
1 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
2 mA, f
=
200 MHz
R
1
−30%
80
150
0.51
1.0
2.2
4.7
10
22
47
+30%
kΩ
MHz
−4.9
−
0.2
V
V
400
460
−
0.25
V
200
20
Typ
Max
Unit
V
V
µA
µA
mA
cutoff current UNR2113
(Collector open) UNR2112/2114/211D/
211E/211M/211N/211T
UNR211Z
UNR2111
UNR211F/211H
UNR2119
UNR2118/211L/211V
Forward current UNR211V
transfer ratio
UNR2118/211L
UNR2119/211D/211F/211H
UNR2111
UNUNR2112/211E
UNR211Z
UNR2113/2114/211M
UNR211N/211T
UNR2110
*
/2115
*
/2116
*
/2117
*
Collector-emitter saturation voltage
UNR211V
Output voltage high-level
Output voltage low-level
UNR2113
UNR211D
UNR211E
Transition frequency
UNR2114/2119/211E
211F/211H
Input resistance
UNR2118
UNR2119
UNR211H/211M/211V
UNR2116/211F/211L/211N/211Z
UNR2111/2114/2115
UNR2112/2117/211T
UNR2110/2113/211D/211E
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
160 to 260
R
210 to 340
S
290 to 460
No-rank
160 to 460
2
SJH00006CED
UNR211x Series
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Resistance ratio UNR211M
UNR211N
UNR2118/2119
UNR211Z
UNR2114
UNR211H
UNR211T
UNR211F
UNR211V
UNR2111/2112/2113/211L
UNR211E
UNR211D
0.8
1.70
3.7
0.37
0.17
0.17
0.08
Symbol
R
1
/R
2
Conditions
Min
Typ
0.047
0.1
0.10
0.21
0.21
0.22
0.47
0.47
1.0
1.0
2.14
4.7
1.2
2.60
5.7
0.57
0.25
0.27
0.12
Max
Unit
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
250
Total power dissipation P
T
(mW)
200
150
100
50
0
0
40
80
120
160
Ambient temperature T
a
(°C)
Characteristics charts of UNR2110
I
C
V
CE
T
a
=
25°C
I
B
= −1.0
mA
−
0.9 mA
−100
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−60
−
0.2 mA
−
0.1 mA
−20
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
400
h
FE
I
C
V
CE
=
–10 V
−120
−10
Forward current transfer ratio h
FE
Collector current I
C
(mA)
300
T
a
=
75°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
200
25°C
−25°C
−40
100
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00006CED
3
UNR211x Series
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR2111
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
−160
I
B
= −1.0
mA
T
a
=
25°C
−100
V
CE(sat)
I
C
I
C
/ I
B
=
10
h
FE
I
C
160
V
CE
= −10
V
T
a
=
75°C
−
0.9 mA
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−
0.8 mA
−
0.7 mA
−
0.6 mA
−10
25°C
120
−25°C
80
−80
−
0.5 mA
−
0.4 mA
−
0.3 mA
−1
T
a
=
75°C
25°C
−
0.1
−25°C
−40
−
0.2 mA
−
0.1 mA
40
0
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
O
= −5
V
T
a
=
25°C
−100
V
IN
I
O
V
O
= −
0.2 V
T
a
=
25°C
5
Output current I
O
(
µA
)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
−
0.01
−
0.1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
4
SJH00006CED
UNR211x Series
Characteristics charts of UNR2112
I
C
V
CE
I
B
= −1.0
mA
−
0.9mA
−
0.8mA
−
0.7mA
−
0.6mA
−
0.5mA
−80
−
0.4mA
−
0.3mA
−40
−
0.2mA
−
0.1mA
0
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
−160
Collector current I
C
(mA)
−120
−10
Forward current transfer ratio h
FE
300
−1
25°C
−
0.1
−25°C
T
a
= 75°C
T
a
= 75°C
200
25°C
−25°C
100
0
−2
−4
−6
−8
−10
−12
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
I
O
V
IN
−10
4
V
IN
I
O
V
O
=
−5
V
T
a
= 25°C
−100
V
O
= −
0.2 V
T
a
= 25°C
5
Output current I
O
(µA)
4
Input voltage V
IN
(V)
−10
3
−10
3
−10
2
−1
2
−10
−
0.1
1
0
−
0.1
−1
−10
−100
−1
−
0.4
−
0.6
−
0.8
−1.0
−1.2
−1.4
−
0.01
−
0.1
−1
−10
−100
Collector-base voltage V
CB
(V)
Input voltage V
IN
(V)
Output current I
O
(mA)
Characteristics charts of UNR2113
I
C
V
CE
I
B
= −1.0
mA
T
a
=
25°C
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
= −10
V
−160
−
0.9 mA
−
0.8 mA
−
0.7 mA
−
0.6 mA
−
0.5 mA
−80
−
0.4 mA
−
0.3 mA
−40
−
0.2 mA
−
0.1 mA
0
−2
−4
−6
−8
−10
−12
Forward current transfer ratio h
FE
Collector current I
C
(mA)
−120
−10
300
T
a
=
75°C
25°C
200
−25°C
−1
T
a
=
75°C
25°C
−
0.1
−25°C
100
0
−
0.01
−
0.1
−1
−10
−100
0
−1
−10
−100
−1
000
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00006CED
5
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