MITSUBISHI Nch POWER MOSFET
FS2UM-3
HIGH-SPEED SWITCHING USE
FS2UM-3
OUTLINE DRAWING
10.5MAX.
r
3.2
7.0
Dimensions in mm
4.5
1.3
16
f
3.6
3.8MAX.
1.0
12.5MIN.
0.8
D
0.5
4.5MAX.
2.54
2.54
2.6
q w e
wr
¡10V
DRIVE
¡V
DSS ................................................................................
150V
¡r
DS (ON) (MAX) ................................................................
0.8Ω
¡I
D ............................................................................................
2A
¡Integrated
Fast Recovery Diode (TYP.)
.............
65ns
q
q
GATE
w
DRAIN
e
SOURCE
r
DRAIN
e
TO-220
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
V
DSS
V
GSS
I
D
I
DM
I
DA
I
S
I
SM
P
D
T
ch
T
stg
—
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
Typical value
V
GS
= 0V
V
DS
= 0V
Conditions
Ratings
150
±20
2
8
2
2
8
20
–55 ~ +150
–55 ~ +150
2.0
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS2UM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol
V
(BR) DSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
t
rr
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
(Tch = 25°C)
Test conditions
I
D
= 1mA, V
GS
= 0V
V
GS
=
±20V,
V
DS
= 0V
V
DS
= 150V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
DS
= 5V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
Limits
Min.
150
—
—
2.0
—
—
—
—
—
—
—
Typ.
—
—
—
3.0
0.59
0.59
3.0
280
60
14
16
8
19
7
1.0
—
65
Max.
—
±0.1
0.1
4.0
0.80
0.80
—
—
—
—
—
—
—
—
1.5
6.25
—
Unit
V
µA
mA
V
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
V
DD
= 80V, I
D
= 1A, V
GS
= 10V, R
GEN
= R
GS
= 50Ω
—
—
—
—
—
—
I
S
= 1A, V
GS
= 0V
Channel to case
I
S
= 2A, dis/dt = –100A/µs
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
40
POWER DISSIPATION P
D
(W)
DRAIN CURRENT I
D
(A)
MAXIMUM SAFE OPERATING AREA
2
10
1
7
5
3
2
10
0
7
5
3
2
10
–1
DC
tw = 10ms
32
24
100ms
1ms
10ms
16
8
0
0
50
100
150
200
7
5
T
C
= 25°C
3
Single Pulse
2
2 3 5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
2
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
CASE TEMPERATURE T
C
(°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
5.0
T
C
= 25°C
Pulse Test
V
GS
= 20V 10V 8V
6V
2.0
V
GS
= 20V 10V 6V
T
C
= 25°C
Pulse Test
5V
DRAIN CURRENT I
D
(A)
4.0
DRAIN CURRENT I
D
(A)
P
D
= 20W
1.6
3.0
1.2
2.0
5V
0.8
1.0
0.4
4V
0
0
1.0
2.0
3.0
4.0
5.0
0
0
0.4
0.8
1.2
1.6
2.0
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN-SOURCE VOLTAGE V
DS
(V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2UM-3
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
5.0
T
C
= 25°C
Pulse Test
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
T
C
= 25°C
Pulse Test
V
GS
= 10V
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(Ω)
4.0
0.8
3.0
0.6
20V
2.0
I
D
= 3A
2A
0.4
1.0
1A
0.2
0
10
–2
2 3 5 710
–1
2 3 5 7 10
0
2 3 5 7 10
1
DRAIN CURRENT I
D
(A)
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
TRANSFER CHARACTERISTICS
(TYPICAL)
10
T
C
= 25°C
V
DS
= 10V
Pulse Test
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10
1
V
DS
= 5V
7
Pulse Test
5
4
3
2
10
0
7
5
4
3
2
DRAIN CURRENT I
D
(A)
6
4
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
8
2
T
C
= 25°C
75°C
125°C
0
0
4
8
12
16
20
10
–1 –1
10
2 3 4 5 7 10
0
2 3 4 5 7 10
1
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
Tch = 25°C
10
3
f = 1MH
Z
7
V
GS
= 0V
Ciss
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
7
5
3
2
10
2
t
f
7
5
t
d(off)
3
2
t
d(on)
10
1
7
5
3
2
10
0 –1
10
t
r
Tch = 25°C
V
DD
= 80V
V
GS
= 10V
R
GEN
= R
GS
= 50Ω
2
10
2
7
5
3
2
10
1
7
5
3
2
Coss
Crss
3 5 710
0
2 3 5 7 10
1
2 3 5 7 10
2
2 3
DRAIN-SOURCE VOLTAGE V
DS
(V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
5
3
2
2 3 4 5 7 10
0
2 3 4 5 7 10
1
DRAIN CURRENT I
D
(A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS2UM-3
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
V
GS
= 0V
Pulse Test
GATE-SOURCE VOLTAGE V
GS
(V)
20
Tch = 25°C
I
D
= 2A
16
SOURCE CURRENT I
S
(A)
8
12
V
DS
= 50V
80V
100V
6
8
4
T
C
= 125°C
75°C
25°C
4
2
0
0
4
8
12
16
20
0
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Q
g
(nC)
SOURCE-DRAIN VOLTAGE V
SD
(V)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25°C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t°C)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10
1
7
V
GS
= 10V
I
D
= 1/2I
D
5
Pulse Test
4
3
2
10
0
7
5
4
3
2
10
–1
–50
0
50
100
150
5.0
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
V
DS
= 10V
I
D
= 1mA
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
4.0
3.0
2.0
1.0
0
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
CHANNEL TEMPERATURE Tch (°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25°C)
TRANSIENT THERMAL IMPEDANCE Z
th (ch–c)
(°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
V
GS
= 0V
I
D
= 1mA
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
D = 1.0
0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
P
DM
tw
T
D
=
tw
T
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
10
–1 –4
10 2 3 5710
–3
2 3 5710
–2
2 3 5710
–1
2 3 5710
0
2 3 5710
1
2 3 5710
2
PULSE WIDTH t
w
(s)
Feb.1999
CHANNEL TEMPERATURE Tch (°C)
京公网安备 11010802033920号
EEWORLD
