Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB555 2SB556
DESCRIPTION
・With
TO-3 package
・Complement
to type 2SD425/426
・High
power dissipation
APPLICATIONS
・Power
amplifier applications
・Recommended
for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
2
3
Base
Emitter
Fig.1 simplified outline (TO-3) and symbol
Collector
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
固电
导½
半
ES
G
2SB555
2SB556
2SB555
Open base
2SB556
Open collector
Open emitter
V
CBO
V
CEO
HAN
INC
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
MIC
E
CONDITIONS
OR
UCT
ND
O
VALUE
-140
-120
-140
-120
-5
-12
12
UNIT
V
V
V
EBO
I
C
I
E
P
C
T
j
T
stg
V
A
A
W
℃
℃
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
100
150
-65~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SB555 2SB556
MIN
TYP.
MAX
UNIT
2SB555
V
(BR)CEO
Collector-emitter
breakdown voltage
2SB556
I
C
=-0.1A ;I
B
=0
-140
V
-120
V
(BR)EBO
Emitter-base breakdown voltage
I
E
=-10mA ;I
C
=0
-5
V
2SB555
V
CEsat
Collector-emitter
saturation voltage
2SB556
I
C
=-7A; I
B
=-0.7A
-3.0
I
C
=-6A; I
B
=-0.6A
V
V
BE
Base-emitter on voltage
I
C
=-7A ; V
CE
=-5V
-2.5
V
I
CBO
Collector cut-off current
I
EBO
固电
Emitter cut-off current
导½
半
ANG
V
CB
=-50V; I
E
=0
-0.1
mA
V
EB
=-5V; I
C
=0
h
FE
DC current gain
C
OB
Output capacitance
f
T
Transition frequency
CH
IN
MIC
E SE
I
C
=-2A ; V
CE
=-5V
I
C
=-2A ; V
CE
=-5V
OR
UCT
ND
O
-0.1
40
140
330
6
mA
I
E
=0 ; V
CB
=-10V; f=1.0MHz
pF
MHz
2
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