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2SK2009(TE85L,F)

Description
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,200MA I(D),SC-59
CategoryDiscrete semiconductor    The transistor   
File Size273KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

2SK2009(TE85L,F) Overview

TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,200MA I(D),SC-59

2SK2009(TE85L,F) Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Reach Compliance Codeunknow
ECCN codeEAR99
ConfigurationSingle
Maximum drain current (Abs) (ID)0.2 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.2 W
surface mountYES
Base Number Matches1
2SK2009
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK2009
High Speed Switching Applications
Analog Switch Applications
High input impedance.
Low gate threshold voltage: V
th
= 0.5~1.5 V
Excellent switching times: t
on
= 0.06
μs
(typ.)
t
off
= 0.12
μs
(typ.)
Low drain-source ON resistance: R
DS (ON)
= 1.2
(typ.)
Small package.
Enhancement-mode
Unit: mm
Marking
Equivalent Circuit
JEDEC
TO-236MOD
SC-59
2-3F1F
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
V
DS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
30
±20
200
200
150
−55~150
Unit
V
V
mA
mW
°C
°C
JEITA
TOSHIBA
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device. Please handle with caution.
1
2007-11-01

2SK2009(TE85L,F) Related Products

2SK2009(TE85L,F) 2SK2009(TE85L)
Description TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,200MA I(D),SC-59 TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,200MA I(D),SC-59
Is it Rohs certified? conform to incompatible
Reach Compliance Code unknow unknow
Configuration Single Single
Maximum drain current (Abs) (ID) 0.2 A 0.2 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 0.2 W 0.2 W
surface mount YES YES
Base Number Matches 1 1
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