2SK2313(Q) datasheet, PDF - EEWORLD Datasheet

2SK2313(Q): DescriptionTRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,60A I(D),TO-247VAR; CategoryDiscrete semiconductor The transistor; File Size446KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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2SK2313(Q) Overview

TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,60A I(D),TO-247VAR

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	,
Reach Compliance Code	unknow
Configuration	Single
Maximum drain current (Abs) (ID)	60 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	150 W
surface mount	NO
Base Number Matches	1

	2SK2313(Q)	2SK2313(F)
Description	TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,60A I(D),TO-247VAR	mosfet power mosfet N-Ch 60v 60a rdson=0.011ohm
Is it Rohs certified?	conform to	conform to
Reach Compliance Code	unknow	unknow
Base Number Matches	1	1

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