N-channel enhancement mode field-effect transistor
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| package instruction | PLASTIC, LFPAK-4 |
| Contacts | 235 |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 32 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 80 V |
| Maximum drain current (Abs) (ID) | 34 A |
| Maximum drain current (ID) | 34 A |
| Maximum drain-source on-resistance | 0.0275 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | MO-235 |
| JESD-30 code | R-PSSO-G4 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 74 W |
| Maximum pulsed drain current (IDM) | 137 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
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