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MUN5113DW1T3

Description
100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size221KB,8 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric View All

MUN5113DW1T3 Overview

100mA, 50V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, CASE 419B-01, 6 PIN

MUN5113DW1T3 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Manufacturer packaging codeCASE 419B-01
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

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