NTHC5513T1G datasheet, PDF - EEWORLD Datasheet

NTHC5513T1G: Description3.1A, 20V, 0.08ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8; CategoryDiscrete semiconductor The transistor; File Size857KB，9 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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3.1A, 20V, 0.08ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Rochester Electronics
package instruction	LEAD FREE, CASE 1206A-03, CHIPFET-8
Contacts	8
Manufacturer packaging code	CASE 1206A-03
Reach Compliance Code	unknown
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V
Maximum drain current (ID)	3.1 A
Maximum drain-source on-resistance	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XDSO-C8
JESD-609 code	e3
Number of components	2
Number of terminals	8
Operating mode	ENHANCEMENT MODE
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)	10 A
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON

	NTHC5513T1G	NTHC5513T1
Description	3.1A, 20V, 0.08ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 1206A-03, CHIPFET-8	3.1A, 20V, 0.08ohm, 2 CHANNEL,N AND P-CHANNEL, Si, POWER, MOSFET, CASE 1206A-03, CHIPFET-8
Is it lead-free?	Contains lead	Lead free
Is it Rohs certified?	conform to	incompatible
Maker	Rochester Electronics	Rochester Electronics
package instruction	LEAD FREE, CASE 1206A-03, CHIPFET-8	CASE 1206A-03, CHIPFET-8
Contacts	8	8
Manufacturer packaging code	CASE 1206A-03	CASE 1206A-03
Reach Compliance Code	unknown	unknown
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	20 V	20 V
Maximum drain current (ID)	3.1 A	3.1 A
Maximum drain-source on-resistance	0.08 Ω	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-XDSO-C8	R-XDSO-C8
JESD-609 code	e3	e0
Number of components	2	2
Number of terminals	8	8
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	240
Polarity/channel type	N-CHANNEL AND P-CHANNEL	N-CHANNEL AND P-CHANNEL
Maximum pulsed drain current (IDM)	10 A	10 A
Certification status	COMMERCIAL	COMMERCIAL
surface mount	YES	YES
Terminal surface	MATTE TIN	TIN LEAD
Terminal form	C BEND	C BEND
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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