2SA965TM-Y-C datasheet, PDF - EEWORLD Datasheet

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2SA965TM-Y-C: DescriptionSmall Signal Bipolar Transistor, 0.8A I(C), PNP; CategoryDiscrete semiconductor The transistor; File Size122KB，1 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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2SA965TM-Y-C Overview

Small Signal Bipolar Transistor, 0.8A I(C), PNP

2SA965TM-Y-C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compli
Maximum collector current (IC)	0.8 A
Configuration	Single
Minimum DC current gain (hFE)	120
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.9 W
surface mount	NO
Nominal transition frequency (fT)	120 MHz
Base Number Matches	1

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2SA965TM

Elektronische Bauelemente

-0.8A , -120V

PNP Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



TO-92MOD

A

D

Complementary to 2SC2235

Power Amplifier Applications

CLASSIFICATION OF h

FE

Product-Rank

Range

2SA965TM-O

80-160

2SA965TM-Y

120-240

K

E

B

F

C

N

G

H

Collector

M

L

REF.

Millimeter

Min.

Max.

5.50

6.50

8.00

9.00

12.70

14.50

4.50

5.30

0.35

0.65

0.30

0.51

1.50 TYP.

J



Emitter



Collector



Base



A

B

C

D

E

F

G

REF.

H

J

K

L

M

N



Base



Emitter

Millimeter

Min.

Max.

1.70

2.05

2.70

3.20

0.85

1.15

1.60 Max

0.00

0.40

4.00 Min

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance, Junction To Ambient

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

R

θJA

T

J

, T

STG

Rating

-120

-5

-0.8

0.9

139

150, -55~150

Unit

V

A

W

°C/W

°C

ELECTRICAL CHARACTERISTICS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE

V

CE(sat)

V

BE

f

T

C

ob

Min.

-120

-5

-

80

-

Typ.

-

120

-

Max.

-

-0.1

240

-1

-

40

Unit

V

μA

V

MHz

pF

Test Conditions

I

C

= -1mA, I

E

=0

I

C

= -10mA, I

B

=0

I

E

= -1mA, I

C

=0

V

CB

= -120V, I

E

=0

V

EB

= -5V, I

C

=0

V

CE

= -5V, I

C

= -100mA

I

C

= -500mA, I

B

= -50mA

V

CE

= -5V, I

C

= -0.5A

V

CE

= -5V, I

C

= -100mA

V

CB

= -10V, I

E

=0, f=1MHz

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

13-Aug-2013 Rev. B

Page 1 of 1

2SA965TM-Y-C Related Products

	2SA965TM-Y-C	2SA965TM-O-C	2SA965TM-C	2SA965TM-O	2SA965TM-Y
Description	Small Signal Bipolar Transistor, 0.8A I(C), PNP	Small Signal Bipolar Transistor, 0.8A I(C), PNP	Small Signal Bipolar Transistor	Small Signal Bipolar Transistor, 0.8A I(C), PNP	Small Signal Bipolar Transistor, 0.8A I(C), PNP
Reach Compliance Code	compli	compli	compli	compli	compli
Base Number Matches	1	1	1	1	1
Is it Rohs certified?	conform to	conform to	-	conform to	conform to
Maximum collector current (IC)	0.8 A	0.8 A	-	0.8 A	0.8 A
Configuration	Single	Single	-	Single	Single
Minimum DC current gain (hFE)	120	80	-	80	120
Maximum operating temperature	150 °C	150 °C	-	150 °C	150 °C
Polarity/channel type	PNP	PNP	-	PNP	PNP
Maximum power dissipation(Abs)	0.9 W	0.9 W	-	0.9 W	0.9 W
surface mount	NO	NO	-	NO	NO
Nominal transition frequency (fT)	120 MHz	120 MHz	-	120 MHz	120 MHz

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