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2SA817-O

Description
TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size358KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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2SA817-O Overview

TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

2SA817-O Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instruction2-5F1B, SC-43, 3 PIN
Contacts3
Reach Compliance Codeunknow
Maximum collector current (IC)0.3 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)70
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1
2SA817
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA817
Audio Frequency Amplifier Applications
Complementary to 2SC1627.
Suitable for driver of 20~25 watts audio amplifiers.
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−80
−80
−5
−300
−60
600
150
−55~150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
TO-92
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-43
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
TOSHIBA
2-5F1B
operating temperature/current/voltage, etc.) are within the
Weight: 0.21 g (typ.)
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics
(Ta
=
25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE (1)
DC current gain
(Note)
h
FE (2)
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
V
CE (sat)
V
BE
f
T
C
ob
Test Condition
V
CB
= −50
V, I
E
=
0
V
EB
= −5
V, I
C
=
0
I
C
= −5
mA, I
B
=
0
V
CE
= −2
V, I
C
= −50
mA
V
CE
= −2
V, I
C
= −200
mA
I
C
= −200
mA, I
B
= −20
mA
V
CE
= −2
V, I
C
= −5
mA
V
CE
= −10
V, I
C
= −10
mA
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−80
70
40
−0.55
70
Typ.
100
14
Max
−0.1
−0.1
240
−0.4
−0.8
V
V
MHz
pF
Unit
μA
μA
V
Note: h
FE (1)
classification O: 70~140, Y: 120~240
1
2007-11-01

2SA817-O Related Products

2SA817-O 2SA817-Y
Description TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal TRANSISTOR 300 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal
Is it Rohs certified? incompatible incompatible
Parts packaging code TO-92 TO-92
package instruction 2-5F1B, SC-43, 3 PIN 2-5F1B, SC-43, 3 PIN
Contacts 3 3
Reach Compliance Code unknow unknow
Maximum collector current (IC) 0.3 A 0.3 A
Collector-emitter maximum voltage 80 V 80 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 70 120
JEDEC-95 code TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 100 MHz 100 MHz
Base Number Matches 1 1

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