PRELIMINARY PRODUCT INFORMATION
MOS FIELD EFFECT TRANSISTOR
µ
PA2754GR
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The
µ
PA2754GR is Dual N-Channel MOS Field Effect
Transistor designed for Li-ion battery protection circuit
and power management application.
PACKAGE DRAWING (Unit : mm)
8
5
1 : Source 1
2 : Gate 1
7, 8 : Drain 1
3 : Source 2
4 : Gate 2
5, 6 : Drain 2
6.0 ±0.3
4.4
+0.10
–0.05
FEATURES
•
Dual chip type
•
Low on-state resistance
R
DS(on)1
= 14.5 mΩ MAX. (V
GS
= 4.5 V, I
D
= 5.5 A)
R
DS(on)2
= 15.0 mΩ MAX. (V
GS
= 4.0 V, I
D
= 5.5 A)
R
DS(on)4
= 18.6 mΩ MAX. (V
GS
= 2.5 V, I
D
= 5.5 A)
•
Low C
iss
: C
iss
= 1940 pF TYP. (V
DS
= 10 V, V
GS
= 0 V)
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
1
4
5.37 MAX.
1.44
0.8
1.8 MAX.
0.15
0.05 MIN.
0.5 ±0.2
0.10
1.27 0.78 MAX.
0.40
+0.10
–0.05
ORDERING INFORMATION
PART NUMBER
PACKAGE
Power SOP8
0.12 M
µ
PA2754GR
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C, All terminals are connected.)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note2
Note1
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
30
±12
±11
±88
2.0
1.7
150
–55 to + 150
9.0
8.1
V
V
A
A
W
W
°C
°C
A
mJ
EQUIVALENT CIRCUIT
(1/2 circuit)
Drain
Drain Current (pulse)
Total Power Dissipation (2 units)
Total Power Dissipation (1 unit)
Channel Temperature
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note3
Note3
Note2
Gate
Body
Diode
I
AS
E
AS
Gate
Protection
Diode
Source
Notes 1.
PW
≤
10
µ
s, Duty cycle
≤
1%
2
2.
T
A
= 25°C, Mounted on ceramic substrate of 2000 mm x 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
Ω,
V
GS
= 20
→
0 V
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No.
G15816EJ1V0PM00 (1st edition)
Date Published November 2001 NS CP(K)
Printed in Japan
©
2001
µ
PA2754GR
ELECTRICAL CHARACTERISTICS (T
A
= 25°C, All terminals are connected.)
CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
SYMBOL
I
DSS
I
GSS
V
GS(off)
| y
fs
|
R
DS(on)1
R
DS(on)2
R
DS(on)3
R
DS(on)4
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
V
DD
= 24 V
V
GS
= 4.5 V
I
D
= 11 A
I
F
= 11 A, V
GS
= 0 V
I
F
= 11 A, V
GS
= 0 V
di/dt = 100 A/
µ
s
TEST CONDITIONS
V
DS
= 30 V, V
GS
= 0 V
V
GS
= ±12 V, V
DS
= 0 V
V
DS
= 10 V, I
D
= 1 mA
V
DS
= 10 V, I
D
= 5.5 A
V
GS
= 4.5 V, I
D
= 5.5 A
V
GS
= 4.0 V, I
D
= 5.5 A
V
GS
= 3.1 V, I
D
= 5.5 A
V
GS
= 2.5 V, I
D
= 5.5 A
V
DS
= 10 V
V
GS
= 0 V
f = 1 MHz
V
DD
= 15 V, I
D
= 5.5 A
V
GS
= 4.5 V
R
G
= 10
Ω
0.5
8
1.0
16
11.5
11.8
12.7
13.9
1940
385
270
21
45
75
30
25
3
10
0.81
47
41
1.2
14.5
15.0
16.9
18.6
MIN.
TYP.
MAX.
1
±10
1.5
UNIT
µ
A
µ
A
V
S
mΩ
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
τ
τ
= 1
µs
Duty Cycle
≤
1%
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
Preliminary Product Information G15816EJ1V0PM
2
µ
PA2754GR
[MEMO]
Preliminary Product Information G15816EJ1V0PM
3
µ
PA2754GR
•
The information contained in this document is being issued in advance of the production cycle for the
device. The parameters for the device may change before final production or NEC Corporation, at its own
discretion, may withdraw the device prior to its production.
•
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
•
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
•
Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
•
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
•
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
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