INTEGRATED CIRCUITS
NE5517/NE5517A/AU5517
Dual operational transconductance
amplifier
Product data
Replaces NE5517/NE5517A dated 2001 Aug 03
2002 Dec 06
Philips
Semiconductors
Philips Semiconductor
Product data
Dual operational transconductance amplifier
NE5517/NE5517A/
AU5517
DESCRIPTION
The AU5517 and NE5517 contain two current-controlled
transconductance amplifiers, each with a differential input and
push-pull output. The AU5517/NE5517 offers significant design and
performance advantages over similar devices for all types of
programmable gain applications. Circuit performance is enhanced
through the use of linearizing diodes at the inputs which enable a
10 dB signal-to-noise improvement referenced to 0.5% THD. The
AU5517/NE5517 is suited for a wide variety of industrial and
consumer applications.
Constant impedance buffers on the chip allow general use of the
AU5517/NE5517. These buffers are made of Darlington transistors
and a biasing network that virtually eliminate the change of offset
voltage due to a burst in the bias current I
ABC
, hence eliminating the
audible noise that could otherwise be heard in high quality audio
applications.
PIN CONFIGURATION
N, D Packages
I
ABCa
1
D
a
2
+IN
a
3
–IN
a
4
VO
a
5
V– 6
INBUFFER
a
7
VO
BUFFERa
8
16
15
14
13
12
11
10
9
I
ABCb
D
b
+IN
b
–IN
b
VO
b
V+
IN
BUFFERb
VO
BUFFERb
Top View
SL00306
Figure 1. Pin Configuration
FEATURES
•
Constant impedance buffers
•
∆V
BE
of buffer is constant with amplifier I
BIAS
change
•
Excellent matching between amplifiers
•
Linearizing diodes
•
High output signal-to-noise ratio
APPLICATIONS
PIN DESIGNATION
PIN NO.
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
SYMBOL
I
ABCa
D
a
+IN
a
–IN
a
V
Oa
V–
IN
BUFFERa
VO
BUFFERa
VO
BUFFERb
IN
BUFFERb
V+
V
Ob
–IN
b
+IN
b
D
b
I
ABCb
NAME AND FUNCTION
Amplifier bias input A
Diode bias A
Non-inverting input A
Inverting input A
Output A
Negative supply
Buffer input A
Buffer output A
Buffer output B
Buffer input B
Positive supply
Output B
Inverting input B
Non-inverting input B
Diode bias B
Amplifier bias input B
•
Multiplexers
•
Timers
•
Electronic music synthesizers
•
Dolby™ HX Systems
•
Current-controlled amplifiers, filters
•
Current-controlled oscillators, impedances
ORDERING INFORMATION
DESCRIPTION
16-Pin Plastic Dual In-Line Package (DIP)
16-Pin Plastic Dual In-Line Package (DIP)
16-Pin Small Outline (SO) Package
16-Pin Small Outline (SO) Package
TEMPERATURE RANGE
0 to +70
°C
0 to +70
°C
0 to +70
°C
–40 to +125
°C
ORDER CODE
NE5517N
NE5517AN
NE5517D
AU5517D
DWG #
SOT38-4
SOT38-4
SOT109-1
SOT109-1
Dolby is a registered trademark of Dolby Laboratories Inc., San Francisco, Calif.
2002 Dec 06
2
Philips Semiconductor
Product data
Dual operational transconductance amplifier
NE5517/NE5517A/
AU5517
CIRCUIT SCHEMATIC
V+
11
D4
Q6
D6
Q14
Q10
Q12
7,10
Q13
8,9
Q7
Q11
2,15
D2
–INPUT
4,13
1,16
AMP BIAS
INPUT
Q4
Q5
D3
+INPUT
3,14
VOUTPUT
5,12
Q15
Q2
Q9
R1
Q1
D1
D5
Q8
Q16
D7
Q3
D8
V–
6
SL00307
Figure 2. Circuit Schematic
CONNECTION DIAGRAM
B
AMP
BIAS
INPUT
16
B
DIODE
BIAS
15
B
INPUT
(+)
14
B
INPUT
(–)
13
B
BUFFER
INPUT
10
B
BUFFER
OUTPUT
9
B
OUTPUT
12
V+ (1)
11
–
B
+
+
A
–
1
AMP
BIAS
INPUT
A
2
DIODE
BIAS
A
3
INPUT
(+)
A
4
INPUT
(–)
A
5
OUTPUT
A
6
V–
7
BUFFER
INPUT
A
8
BUFFER
OUTPUT
A
NOTE:
1. V+ of output buffers and amplifiers are internally connected.
SL00308
Figure 3. Connection Diagram
2002 Dec 06
3
Philips Semiconductor
Product data
Dual operational transconductance amplifier
NE5517/NE5517A/
AU5517
ABSOLUTE MAXIMUM RATINGS
SYMBOL
V
S
P
D
Supply voltage
1
Power dissipation,
T
amb
= 25
°C
(still air)
2
NE5517N, NE5517AN
NE5517D, AU5517D
V
IN
I
D
I
ABC
I
SC
I
OUT
T
amb
Differential input voltage
Diode bias current
Amplifier bias current
Output short-circuit duration
Buffer output current
3
Operating temperature range
NE5517N, NE5517AN
AU5517D
V
DC
T
stg
T
sld
DC input voltage
Storage temperature range
Lead soldering temperature (10 sec max)
0
°C
to +70
°C
–40
°C
to +125
°C
+V
S
to –V
S
–65
°C
to +150
°C
230
°C
°C
°C
°C
1500
1125
±5
2
2
Indefinite
20
mA
mW
mW
V
mA
mA
PARAMETER
RATING
44 V
DC
or
±22
UNIT
V
NOTES:
1. For selections to a supply voltage above
±22
V, contact factory
2. The following derating factors should be applied above 25
°C
N package at 12.0 mW/°C
D package at 9.0 mW/°C
3. Buffer output current should be limited so as to not exceed package dissipation.
2002 Dec 06
4
Philips Semiconductor
Product data
Dual operational transconductance amplifier
NE5517/NE5517A/
AU5517
DC ELECTRICAL CHARACTERISTICS
1
SYMBOL
PARAMETER
TEST CONDITIONS
AU5517/NE5517
Min
Typ
0.4
V
OS
Input offset voltage
∆V
OS
/∆T
V
OS
including diodes
V
OS
I
OS
Input offset change
Input offset current
∆I
OS
/∆T
I
BIAS
In ut
Input bias current
∆I
B
/∆T
g
M
Forward transconductance
g
M
tracking
I
OUT
Peak output current
Peak output voltage
Positive
Negative
Supply current
V
OS
sensitivity
Positive
Negative
CMRR
Common-mode rejection
ration
Common-mode range
Crosstalk
I
IN
R
IN
B
W
SR
IN
BUFFER
VO
BUFFER
Differential input current
Leakage current
Input resistance
Open-loop bandwidth
Slew rate
Buffer input current
Peak buffer output voltage
∆V
BE
of buffer
Unity gain compensated
5
5
Refer to Buffer V
BE
test circuit
3
10
0.5
5
Referred to input
2
20 Hz < f < 20 kHz
I
ABC
= 0, input =
±4
V
I
ABC
= 0 (Refer to test circuit)
10
R
L
= 0, I
ABC
=5
µA
R
L
= 0, I
ABC
= 500
µA
R
L
= 0
R
L
=
∞,
5
µA ≤
I
ABC
≤
500
µA
R
L
=
∞,
5
µA ≤
I
ABC
≤
500
µA
I
ABC
= 500
µA,
both channels
∆
V
OS
/∆ V+
∆
V
OS
/∆ V–
80
±12
350
300
+12
–12
Avg. TC of input offset current
Over temperature range
Avg. TC of input current
Over temperature range
6700
5400
Over temperature range
I
ABC
5
µA
Avg. TC of input offset voltage
Diode bias current (I
D
) = 500
µA
5
µA ≤
I
ABC
≤
500
µA
0.3
7
0.5
0.1
0.1
0.001
0.4
1
0.01
9600
0.3
5
500
650
3
350
300
+12
–12
4
150
150
80
±12
1300
7700
4000
5
8
0.6
5
Max
5
5
Min
NE5517A
Typ
0.4
0.3
7
0.5
0.1
0.1
0.001
0.4
1
0.01
9600
0.3
5
500
7
650
1200
5
7
2
3
0.6
Max
2
5
2
UNIT
mV
mV
mV
µV/°C
mV
mV
µA
µA/°C
µA
µA
µA/°C
µmho
µmho
dB
µA
µA
µA
V
V
4
150
150
mA
µV/V
µV/V
dB
V
dB
10
5
nA
nA
kΩ
MHz
V/µs
5
5
µA
V
0.5
mV
V
OUT
I
CC
+14.2
–14.4
2.6
20
20
110
±13.5
100
0.02
0.2
26
2
50
0.4
5
100
100
+14.2
–14.4
2.6
20
20
110
±13.5
100
0.02
0.2
10
26
2
50
0.4
10
NOTES:
1. These specifications apply for V
S
=
±15
V, T
amb
= 25
°C,
amplifier bias current (I
ABC
) = 500
µA,
Pins 2 and 15 open unless otherwise
specified. The inputs to the buffers are grounded and outputs are open.
2. These specifications apply for V
S
=
±15
V, I
ABC
= 500
µA,
R
OUT
= 5 kΩ connected from the buffer output to –V
S
and the input of the buffer is
connected to the transconductance amplifier output.
3. V
S
=
±15,
R
OUT
= 5 kΩ connected from Buffer output to –V
S
and 5
µA ≤
I
ABC
≤
500
µA.
2002 Dec 06
5
京公网安备 11010802033920号
EEWORLD
