D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
Datasheet BTS737S3
Smart High-Side Power Switch
Four Channels: 4 x 35mΩ
Advanced Current Sense
Product Summary
Operating Voltage
V
bb(on)
Active channels one
On-state Resistance
R
ON
35mΩ
Nominal load current
I
L(NOM)
5.4A
Current limitation
I
L(SCr)
40A
5.0 ...40V
four parallel
9mΩ
11.1A
40A
Package
P-DSO-28
General Description
•
•
N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and
diagnostic feedback, monolithically integrated in Smart SIPMOS
technology.
Providing embedded protective functions
Applications
•
•
•
•
µC compatible high-side power switch with diagnostic feedback for 12V and 24V grounded loads
All types of resistive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
Basic Functions
•
•
•
•
•
Very low standby current
Improved electromagnetic compatibility (EMC)
CMOS compatible input
Stable behaviour at undervoltage
Wide operating voltage range
Protection Functions
•
•
•
•
•
•
•
•
Short circuit protection
Overload protection
Current limitation
Thermal shutdown
Reverse battery protection with external resistor
Overvoltage protection with external resistor (incl. load
dump)
Loss of ground protection
Electrostatic discharge protection (ESD)
Block Diagram
Vbb
IN1
IS1
IS2
IN2
Load 2
IN3
IS3
IS4
IN4
Logic
Channel 3
Channel 4
Logic
Channel 1
Channel 2
Load 1
Diagnostic Function
•
Proportional load current sense (with defined fault signal
during thermal shutdown and current limit)
Load 3
GND
Load 4
Infineon technologies
1 of 15
2004-Sep-16
Datasheet BTS737S3
Functional diagram
overvoltage
protection
internal
voltage
IN1
logic
gate
control
+
charge
pump
current limit
VBB
clamp for
inductive load
OUT1
ESD
IS1
temperature
sensor
Proportional sense
current
LOAD
.
channel 1
IN2
IS2
GND1/2
control and protection circuit
of
channel 2
OUT2
IN3
IS3
control and protection circuit
of
channel 3
OUT3
IN4
IS4
GND3/4
control and protection circuit
of
channel 4
OUT4
Infineon technologies
2
2004-Sep-16
Datasheet BTS737S3
Pin Definitions and Functions
Pin
Symbol Function
1, 7, 8, V
bb
Positive power supply voltage.
Design the
14,
wiring for the simultaneous max. short circuit
15, 28
currents from channel 1 to 4 and also for low
thermal resistance
4
IN1
Input 1,2, 3,4
activates channel 1,2,3,4 in case
of logic high signal
3
IN2
11
IN3
10
IN4
25,26,27
OUT1
Output 1,2,3,4
protected high-side power output
22,23,24
OUT2
of channel 1,23,4. Design the wiring for the
19,20,21
OUT3
max. short circuit current
16,17,18
OUT4
5
IS1
Diagnostic feedback 1 .. 4
of channel 1 to 4
Providing a sense current, proportional to the
6
IS2
load current
12
IS3
13
IS4
2
GND1/2
Ground
of chip 1 (channel 1,2)
9
GND3/4
Ground
of chip 2 (channel 3,4)
Pin configuration
(top view)
V
bb
1
GND1/2
IN2
IN1
IS1
IS2
V
bb
GND3/4
IN4
IN3
IS3
IS4
V
bb
2
3
4
5
6
7
9
10
11
12
13
14
•
28 V
bb
27
26
25
24
23
22
20
19
18
17
16
15
OUT1
OUT1
OUT1
OUT2
OUT2
OUT2
OUT3
OUT3
OUT4
OUT4
OUT4
V
bb
V
bb
8
21 OUT3
Infineon technologies
3
2004-Sep-16
Datasheet BTS737S3
Maximum Ratings
at
T
j
= 25°C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 6)
Supply voltage for full short circuit protection
1)
T
j,start
= -40 ...+150°C
Load current (Short-circuit current, see page 6)
Load dump protection
3)
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
R
I
4)
= 2
Ω,
t
d
= 400 ms; IN = low or high,
each channel loaded with
R
L
= 4.7
Ω,
Operating temperature range
Storage temperature range
Power dissipation (DC)
6)
T
a
= 25°C:
T
a
= 85°C:
(all channels active)
Maximal switchable inductance, single pulse
V
bb
= 12V,
T
j,start
= 150°C
6)
,
I
L
= 4.0 A,
E
AS
= 0.8J, 0
Ω
one channel:
I
L
= 6.0 A,
E
AS
= 1.0J, 0
Ω
two parallel channels:
I
L
= 9.5 A,
E
AS
= 1.5J, 0
Ω
four parallel channels:
see diagrams on page 10
Symbol
V
bb
V
bb
I
L
V
Load dump5
)
T
j
T
stg
P
tot
Values
40
36
I
L(lim)
2
60
-40 ...+150
-55 ...+150
3.7
1.9
Unit
V
V
V
°C
W
Z
L
33
37
64
1.0
4.0
8.0
-10 ... +16
±0.3
±0.3
mH
Electrostatic discharge capability (ESD)
IN:
(Human Body Model)
IS:
out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
R=1.5kΩ; C=100pF
V
ESD
kV
Input voltage (DC)
Current through input pin (DC)
Current through sense pin (DC)
see internal circuit diagram page 9
V
IN
I
IN
I
IS
V
mA
1)
2
)
3)
4)
5)
6)
Single pulse
Current limit is a protection function. Operation in current limitation is considered as "outside" normal
operating range. Protection functions are not designed for continuous repetitive operation.
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND and status pins (a 75Ω
resistor for the GND connection is recommended.
R
I
= internal resistance of the load dump test pulse generator
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air. See page 15
Infineon technologies
4
2004-Sep-16
京公网安备 11010802033920号
EEWORLD
