2SK2083-DL datasheet, PDF - EEWORLD Datasheet

2SK2083-DL: Description5A, 900V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET; CategoryDiscrete semiconductor The transistor; File Size252KB，3 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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2SK2083-DL Overview

5A, 900V, 3.6ohm, N-CHANNEL, Si, POWER, MOSFET

Parameter Name	Attribute value
Objectid	1412363438
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	900 V
Maximum drain current (ID)	5 A
Maximum drain-source on-resistance	3.6 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	70 W
Maximum pulsed drain current (IDM)	10 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	NOT SPECIFIED
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON

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