2SC1846S datasheet, PDF - EEWORLD Datasheet

2SC1846S: DescriptionPower Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size88KB，4 Pages; ManufacturerPanasonic; Websitehttp://www.panasonic.co.jp/semicon/e-index.html; Environmental Compliance

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2SC1846S Overview

Power Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Parts packaging code	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	35 V
Configuration	SINGLE
Minimum DC current gain (hFE)	170
JEDEC-95 code	TO-126
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1.2 W
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

	2SC1846S	2SC1846Q
Description	Power Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN	Power Bipolar Transistor, 1A I(C), 35V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN
Is it Rohs certified?	conform to	conform to
Parts packaging code	SIP	SIP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	35 V	35 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	170	85
JEDEC-95 code	TO-126	TO-126
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	1.2 W	1.2 W
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz
Base Number Matches	1	1

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