This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SD2598
Silicon NPN epitaxial planar type darlington
Unit: mm
For low-frequency amplification
0.7
6.9
±0.1
4.0
2.5
±0.1
(0.8)
(1.0)
(0.2)
4.5
±0.1
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Forward current transfer ratio h
FE
is designed high, which is appro-
priate to the driver circuit of motors and printer hammer
•
A shunt resistor is omitted from the driver.
•
M type package, allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
0.65 max.
■
Features
(1.0)
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
*
Junction temperature
Storage temperature
T
stg
Note) *: Printed circuit board: Copper foil area of 1 cm
2
or more, and the
board thickness of 1.7 mm for the collector portion
Parameter
on
tin
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
/D
Collector-base voltage (Emitter open)
ce
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*1, 2
Collector-emitter saturation voltage
*1
Base-emitter saturation voltage
*1
Transition frequency
V
CE(sat)
V
BE(sat)
f
T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE
Q
R
4 000 to 10 000 8 000 to 20 000
d
pla inc
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0.45
+0.10
–0.05
14.5
±0.5
Rating
60
50
5
Unit
V
V
V
1.05
±0.05
0.45
+0.10
–0.05
2.5
±0.5
2.5
±0.5
1
2
3
1: Emitter
2: Collector
3: Base
MT-2-A1 Package
500
750
1
mA
mA
W
°C
Internal Connection
C
150
B
−55
to
+150
°C
E
ue
Conditions
Min
60
Typ
Max
isc
I
C
=
100
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
100
µA,
I
C
=
0
V
CB
=
25 V, I
E
=
0
V
EB
=
4 V, I
C
=
0
(0.5)
Unit
V
50
5
V
an
V
Ma
int
en
100
nA
V
V
100
nA
V
CE
=
10 V, I
C
=
500 mA
4 000
20 000
2.5
3.0
I
C
=
500 mA, I
B
=
0.5 mA
I
C
=
500 mA, I
B
=
0.5 mA
V
CB
=
10 V, I
E
= −50
mA, f
=
200 MHz
200
MHz
Publication date: February 2003
SJC00269BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SD2598
P
C
T
a
1.2
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
900
I
B
=
150
µA
125
µA
100
µA
I
C
V
CE
T
a
=
25°C
75
µA
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
1 000
Collector power dissipation P
C
(W)
1.0
750
Collector current I
C
(mA)
10
0.8
600
50
µA
25°C
1
T
a
= −25°C
75°C
0.6
450
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
V
BE(sat)
I
C
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
1 000
V
CE
=
10 V
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
100
10
25°C
T
a
= −25°C
1
75°C
0.1
ue
0.01
0.01
0.1
1
10
2
Ma
int
en
an
ce
/D
isc
on
tin
Collector current I
C
(A)
d
pla inc
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0
0
2
4
6
8
10
12
0.01
0.01
0.1
1
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.4
300
0.1
0.2
150
10
Collector-emitter voltage V
CE
(V)
Collector current I
C
(mA)
h
FE
I
C
T
a
=
75°C
C
ob
V
CB
10
5
9.0
Forward current transfer ratio h
FE
10
4
25°C
7.5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
−25°C
6.0
1 0
3
4.5
10
2
3.0
10
1.5
1
0.01
0.1
1
10
0
1
10
100
Collector current I
C
(A)
Collector-base voltage V
CB
(V)
SJC00269BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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an ut e
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as lat
cy
on es
cle
ic. t in
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co fo
ge
.jp rm
.
/en at
/ ion
.
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int
en
an
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
/D
isc
on
tin
ue
di
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