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SFM11-MH1-H

Description
Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon,
CategoryDiscrete semiconductor    diode   
File Size92KB,7 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
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SFM11-MH1-H Overview

Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon,

SFM11-MH1-H Parametric

Parameter NameAttribute value
MakerFORMOSA
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-F2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formFLAT
Terminal locationDUAL

SFM11-MH1-H Preview

Formosa MS
SFM11-MH1 THRU SFM18-MH1
Chip Super Fast Rectifiers Rectifier
List
List................................................................................................. 1
Package outline............................................................................... 2
Features.......................................................................................... 2
Mechanical data............................................................................... 2
Maximum ratings ............................................................................. 2
Rating and characteristic curves........................................................ 3
Pinning information........................................................................... 4
Marking........................................................................................... 4
Suggested solder pad layout............................................................. 4
Packing information.......................................................................... 5
Reel packing.................................................................................... 6
Suggested thermal profiles for soldering processes............................. 6
High reliability test capabilities........................................................... 7
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2014/01/20
Revised Date
-
Revision
A
Page.
7
Page 1
DS-121460
Formosa MS
SFM11-MH1 THRU SFM18-MH1
Chip Super Fast Rectifiers Rectifier
1.0A Surface Mount
Super Fast Rectifiers-50-600V
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space..
Tiny plastic SMD package.
High current capability.
Super fast reovery time for switching mode application.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen free parts, ex. SFM11-MH1-H.
Package outline
SOD-123H1
0.146(3.7)
0.130(3.3)
0.071(1.8)
0.056(1.4)
0.012(0.3) Typ.
0.004(0.1) Typ.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H1
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
Terminals :Plated terminals, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.0103 gram
Dimensions in inches and (millimeters)
0.031(0.8) Typ.
Maximum ratings and Electrical Characteristics
(AT
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current 8.3ms
single half sine-wave(JEDEC method)
Maximum forward voltage at I
F
=1.0A
Maximum DC reverse current T
J
=25°C
at rated DC blocking voltage T
J
=125°C
Typical junction capacitance (Note 2)
Maximum reverse recovery time (Note 1)
Operating junction temperature range
Storage temperature range
V
RRM
V
RMS
V
DC
I
O
I
FSM
V
F
I
R
C
J
t
rr
T
J
T
STG
0.95
50
35
50
100
70
100
150
105
150
200
140
200
T
A
=25
o
C unless otherwise noted)
SYMBOLS
SFM11-MH1 SFM12-MH1 SFM13-MH1 SFM14-MH1 SFM15-MH1 SFM16-MH1 SFM17-MH1 SFM18-MH1
UNIT
300
210
300
1.0
25
1.25
5.0
100
10
35
-55 to +150
-55 to +150
1.70
400
280
400
500
350
500
600
420
600
V
V
V
A
A
V
uA
uA
pF
ns
°C
°C
Note 1. Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2.
Measured at 1 MHz and applied reverse voltage of 4.0 VDC
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2014/01/20
Revised Date
-
Revision
A
Page.
7
Page 2
DS-121460
Rating and characteristic curves (SFM11-MH1 THRU SFM18-MH1)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.2
1.0
0.8
0.6
0.4
0.2
0
0
P.C.B. Mounted on
0.2"x0.2" (5.0 mm x 5.0 mm)
Copper Pad Areas
10
14
-M
H
1
SF
M
INSTANTANEOUS FORWARD CURRENT,(A)
H1
~S
FM
16
-M
H1
1~
11
-M
H
SF
M
SF
M
.1
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
SF
M
17
-M
H
1~
SF
1.0
15
-M
M
18
-M
H
1
25
50
75
100
125
150
175
LEAD TEMPERATURE (°C)
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
50
.001
.4
.6
.8
1.0
1.2
1.4
1.6
1.8
40
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
30
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
70
trr
+0.5A
|
|
|
|
|
|
|
|
JUNCTION CAPACITANCE,(pF)
60
50
40
30
20
10
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2014/01/20
Revised Date
-
Revision
A
Page.
7
Page 3
DS-121460
Formosa MS
SFM11-MH1 THRU SFM18-MH1
Chip Super Fast Rectifiers Rectifier
Pinning information
Pin
Pin1
Pin2
cathode
anode
Simplified outline
Symbol
1
2
1
2
Marking
Type number
SFM11-MH1
SFM12-MH1
SFM13-MH1
SFM14-MH1
SFM15-MH1
SFM16-MH1
SFM17-MH1
SFM18-MH1
Marking code
S1
S2
S3
S4
S5
S6
S7
S8
Suggested solder pad layout
C
A
B
Dimensions in inches and (millimeters)
PACKAGE
SOD-123H1
A
0.071 (1.80)
B
0.051 (1.30)
C
0.067 (1.70)
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2014/01/20
Revised Date
-
Revision
A
Page.
7
Page 4
DS-121460
Formosa MS
SFM11-MH1 THRU SFM18-MH1
Chip Super Fast Rectifiers Rectifier
Packing information
P
0
P
1
d
E
F
B
W
A
P
D
2
T
C
D
W
1
D
1
unit:mm
Item
Symbol
Tolerance
SOD-123H1
Carrier width
Carrier length
Carrier depth
Sprocket hole
13" Reel outside diameter
13" Reel inner diameter
7" Reel outside diameter
7" Reel inner diameter
Feed hole diameter
Sprocket hole position
Punch hole position
Punch hole pitch
Sprocket hole pitch
Embossment center
Overall tape thickness
Tape width
Reel width
A
B
C
d
D
D
1
D
D
1
D
2
E
F
P
P
0
P
1
T
W
W
1
0.1
0.1
0.1
0.1
2.0
min
2.0
min
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.3
1.0
2.00
3.85
1.10
1.50
-
-
178.00
62.00
13.00
1.75
3.50
4.00
4.00
2.00
0.23
8.00
11.40
Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Document ID
Issued Date
2014/01/20
Revised Date
-
Revision
A
Page.
7
Page 5
DS-121460

SFM11-MH1-H Related Products

SFM11-MH1-H SFM11-MH1 SFM12-MH1-H SFM13-MH1 SFM13-MH1-H
Description Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 50V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon,
Maker FORMOSA FORMOSA FORMOSA FORMOSA FORMOSA
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 50 V 50 V 100 V 150 V 150 V
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs 0.035 µs 0.035 µs
surface mount YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL

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