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2SC4562G

Description
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size277KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SC4562G Overview

Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN

2SC4562G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F3
JESD-609 codee6
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Base Number Matches1
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC4562G
Silicon NPN epitaxial planar type
For high-frequency amplification
Complementary to 2SA1748G
Features
Package
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
h
FE
f
T
V
EBO
Collector-base voltage (Emitter open)
sc
on
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Di
Collector-base cutoff current (Emitter open)
na
nc
e/
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
*
te
Collector-emitter saturation voltage
ain
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE
Q
200 to 400
R
250 to 500
Publication date: May 2007
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Rating
50
50
5
Unit
V
V
V
50
mA
°C
150
150
mW
°C
T
stg
−55
to
+150
Conditions
Min
50
Typ
Max
Unit
V
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
50
5
V
V
V
CB
=
10 V, I
E
=
0
V
CE
=
10 V, I
B
=
0
0.1
µA
µA
V
100
V
CE
=
10 V, I
C
=
2 mA
I
C
=
10 mA, I
B
=
1 mA
200
500
V
CE(sat)
C
ob
0.06
250
1.5
0.30
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
MHz
pF
SJC00366AED
M
M
Di ain
sc te
on na
tin nc
ue e/
d
High transition frequency f
T
Small collector output capacitance (Common base, input open cir-
cuited) C
ob
S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing
Code
SMini3-F2
Marking Symbol: AM
Pin Name
1: Base
2: Emitter
3: Collector
1

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Description Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SMINI3-F2, 3 PIN TRANS NPN 50VCEO 50MA SMINI-3

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