CAT28C65BNI-12TE13 datasheet, PDF

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CAT28C65BNI-12TE13: Description8KX8 EEPROM 5V, 120ns, PQCC32, PLASTIC, LCC-32; Categorystorage storage; File Size78KB，13 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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CAT28C65BNI-12TE13 Overview

8KX8 EEPROM 5V, 120ns, PQCC32, PLASTIC, LCC-32

CAT28C65BNI-12TE13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	QFJ
package instruction	QCCJ,
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	120 ns
JESD-30 code	R-PQCC-J32
JESD-609 code	e0
length	13.97 mm
memory density	65536 bit
Memory IC Type	EEPROM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of terminals	32
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8KX8
Package body material	PLASTIC/EPOXY
encapsulated code	QCCJ
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	240
Programming voltage	5 V
Certification status	Not Qualified
Maximum seat height	3.55 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	TIN LEAD
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	QUAD
Maximum time at peak reflow temperature	30
width	11.43 mm

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CAT28C65B

64K-Bit CMOS PARALLEL EEPROM

FEATURES

Fast read access times:

Commercial, industrial and automotive

– 90/120/150ns

Low power CMOS dissipation:

temperature ranges

Automatic page write operation:

– Active: 25 mA max.

– Standby: 100

A max.

Simple write operation:

– 1 to 32 bytes in 5ms

– Page load timer

End of write detection:

– On-chip address and data latches

– Self-timed write cycle with auto-clear

Fast write cycle time:

– Toggle bit

–

DATA

polling

– RDY/BUSY

BUSY

100,000 program/erase cycles

100 year data retention

– 5ms max

CMOS and TTL compatible I/O

Hardware and software write protection

DESCRIPTION

The CAT28C65B is a fast, low power, 5V-only CMOS

parallel EEPROM organized as 8K x 8-bits. It requires a

simple interface for in-system programming. On-chip

address and data latches, self-timed write cycle with

auto-clear and V

power up/down write protection

eliminate additional timing and protection hardware.

DATA

Polling, a RDY/BUSY pin and Toggle status bits

signal the start and end of the self-timed write cycle.

Additionally, the CAT28C65B features hardware and

software write protection.

The CAT28C65B is manufactured using Catalyst’s

advanced CMOS floating gate technology. It is designed

to endure 100,000 program/erase cycles and has a data

retention of 100 years. The device is available in JEDEC-

approved 28-pin DIP, 28-pin TSOP, 28-pin SOIC or 32-

pin PLCC packages.

BLOCK DIAGRAM

A5–A12

ADDR. BUFFER

& LATCHES

INADVERTENT

WRITE

PROTECTION

ROW

DECODER

8,192 x 8

EEPROM

ARRAY

32 BYTE PAGE

VCC

HIGH VOLTAGE

GENERATOR

CONTROL

LOGIC

I/O BUFFERS

TIMER

DATA POLLING,

TOGGLE BIT &

RDY/BUSY LOGIC

COLUMN

DECODER

I/O0–I/O7

A0–A4

RDY/BUSY

ADDR. BUFFER

& LATCHES

Characteristics subject to change without notice

Doc. No. MD-1009, Rev. H

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