EEWORLDEEWORLDEEWORLD

Part Number

Search

NAND256R4A3BZA1E

Description
16MX16 FLASH 1.8V PROM, 15000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63
Categorystorage    storage   
File Size150KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

NAND256R4A3BZA1E Overview

16MX16 FLASH 1.8V PROM, 15000ns, PBGA63, 9 X 11 MM, 1 MM HEIGHT, 0.80 MM PITCH, VFBGA-63

NAND256R4A3BZA1E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeBGA
package instructionBGA,
Contacts63
Reach Compliance Codecompliant
ECCN code3A991.B.1.A
Maximum access time15000 ns
JESD-30 codeR-PBGA-B63
memory density268435456 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of terminals63
word count16777216 words
character code16000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize16MX16
Package body materialPLASTIC/EPOXY
encapsulated codeBGA
Package shapeRECTANGULAR
Package formGRID ARRAY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Programming voltage1.8 V
Certification statusNot Qualified
Maximum supply voltage (Vsup)1.95 V
Minimum supply voltage (Vsup)1.65 V
Nominal supply voltage (Vsup)1.8 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formBALL
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
NAND FLASH
528 Byte, 264 Word Page Family
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16)
1.8V, 3V Supply Flash Memories
DATA BRIEFING
FEATURES SUMMARY
s
HIGH DENSITY NAND FLASH MEMORIES
– Up to 1 Gbit memory array
– Up to 32Mbit spare area
– Cost effective solutions for mass storage ap-
plications
s
Figure 1. Packages
NAND INTERFACE
– x8 or x16 bus width
– Multiplexed Address/ Data
– Pinout compatibility for all densities
TSOP48
12 x 20 mm
s
SUPPLY VOLTAGE
– 1.8V device: V
CC
= 1.65 to 1.95V
– 3.0V device: V
CC
= 2.7 to 3.6V
FBGA
s
PAGE SIZE
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
VFBGA63 8.5x15x1 mm
TFBGA63 8.5x15x1.2 mm
VFBGA63 9x11x1 mm
s
BLOCK SIZE
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
s
AUTOMATIC PAGE 0 READ AT POWER-UP
OPTION
– Boot from NAND support
– Automatic Memory Download
s
PAGE READ / PROGRAM
– Random access: 12µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
s
s
SERIAL NUMBER OPTION
HARDWARE DATA PROTECTION
– Program/Erase locked during Power transi-
tions
s
COPY BACK PROGRAM MODE
– Fast page copy without external buffering
CACHE PROGRAM MODE
– Internal Cache Register to improve the pro-
gram throughput
s
s
DATA INTEGRITY
– 100,000 Program/Erase cycles
– 10 years Data Retention
s
FAST BLOCK ERASE
– Block erase time: 2ms (Typ)
STATUS REGISTER
ELECTRONIC SIGNATURE
CHIP ENABLE ‘DON’T CARE’ OPTION
– Simple interface with microcontroller
s
DEVELOPMENT TOOLS
– Error Correction Code software and hard-
ware models
– Bad Blocks Management and Wear Leveling
algorithms
– PC Demo board with simulation software
– File System OS Native reference software
– Hardware simulation models
s
s
s
August 2003
For further information please contact the STMicroelectronics distributor nearest to you.
1/5
AD drawing PCB has many white lines after enlarging
When the AD PCB is enlarged, there are many white lines, not flying lines, and many horizontal bars. If it is not enlarged, there are only flying lines. Please help, what is going on?...
你的虎牙脆 PCB Design
AD Ignore DRC with irregular slotting settings using pad stacking
[i=s]This post was last edited by p0we7 on 2019-7-30 22:44[/i]======================= Solved: It turned out that the Hold to Hold rule did not have online detection enabled, so the corresponding DRC w...
p0we7 PCB Design
High frequency characteristics of resistors
High frequency characteristics of resistorsWhen resistors are used in high-frequency applications, the effects of the resistor's inherent inductance and inherent capacitance must be considered. At thi...
btty038 RF/Wirelessly
Problems with dynamic load line locus of transistor switches
[i=s]This post was last edited by engineer-x on 2022-2-9 17:36[/i]In the chapter on transistor switching principles in the power supply book, The book says that when an inductive load is connected, th...
engineer-x Analog electronics
Inductor ripple rate r value selection problem
The book on power supply design describes it this way. I have many questions about the inductor current ripple rate.From this formula in the book, we know that r is related to the volt-second product,...
小太阳yy Switching Power Supply Study Group
BOX unpacking test
After unboxing, verify the BOX function through the APP and take a photo with the sensor in use. Unboxing and charging APP installed successfully DEMO 1 DEMO 2 DEMO 3 Signal StrengthChargingThe device...
胡万金 ST MEMS Sensor Creative Design Competition

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号