75 A, 55 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
| Parameter Name | Attribute value |
| Brand Name | NXP Semiconduc |
| Is it Rohs certified? | conform to |
| Parts packaging code | TO-220 |
| package instruction | PLASTIC, SC-46, 3 PIN |
| Contacts | 3 |
| Manufacturer packaging code | SOT78 |
| Reach Compliance Code | _compli |
| ECCN code | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 560 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V |
| Maximum drain current (Abs) (ID) | 75 A |
| Maximum drain current (ID) | 75 A |
| Maximum drain-source on-resistance | 0.0044 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e3 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 300 W |
| Maximum pulsed drain current (IDM) | 240 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin (Sn) |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| PHP191NQ06LT,127 | PHP191NQ06LT | |
|---|---|---|
| Description | 75 A, 55 V, 0.0044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | N-channel TrenchMOS logic level FET |
| Is it Rohs certified? | conform to | conform to |
| Parts packaging code | TO-220 | TO-220AB |
| package instruction | PLASTIC, SC-46, 3 PIN | PLASTIC, SC-46, 3 PIN |
| Contacts | 3 | 3 |
| Reach Compliance Code | _compli | _compli |
| ECCN code | EAR99 | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| Avalanche Energy Efficiency Rating (Eas) | 560 mJ | 560 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V | 55 V |
| Maximum drain current (Abs) (ID) | 75 A | 75 A |
| Maximum drain current (ID) | 75 A | 75 A |
| Maximum drain-source on-resistance | 0.0044 Ω | 0.0044 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-220AB |
| JESD-30 code | R-PSFM-T3 | R-PSFM-T3 |
| JESD-609 code | e3 | e3 |
| Number of components | 1 | 1 |
| Number of terminals | 3 | 3 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 300 W | 300 W |
| Maximum pulsed drain current (IDM) | 240 A | 240 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | NO | NO |
| Terminal surface | Tin (Sn) | Tin (Sn) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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