N-channel TrenchMOS standard level FET
| Parameter Name | Attribute value |
| Brand Name | NXP Semiconduc |
| Is it Rohs certified? | conform to |
| Maker | NXP |
| Parts packaging code | D2PAK |
| package instruction | PLASTIC, D2PAK-3 |
| Contacts | 3 |
| Manufacturer packaging code | SOT404 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 30.3 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V |
| Maximum drain current (Abs) (ID) | 20.3 A |
| Maximum drain current (ID) | 20.3 A |
| Maximum drain-source on-resistance | 0.075 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 2 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 62 W |
| Maximum pulsed drain current (IDM) | 81 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| PHB20N06T,118 | PHB20N06T | |
|---|---|---|
| Description | N-channel TrenchMOS standard level FET | N-channel TrenchMOS standard level FET |
| Is it Rohs certified? | conform to | conform to |
| Maker | NXP | NXP |
| package instruction | PLASTIC, D2PAK-3 | PLASTIC, D2PAK-3 |
| Contacts | 3 | 3 |
| Reach Compliance Code | compli | compli |
| ECCN code | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 30.3 mJ | 30.3 mJ |
| Shell connection | DRAIN | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 55 V | 55 V |
| Maximum drain current (Abs) (ID) | 20.3 A | 20.3 A |
| Maximum drain current (ID) | 20.3 A | 20.3 A |
| Maximum drain-source on-resistance | 0.075 Ω | 0.075 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-PSSO-G2 | R-PSSO-G2 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C | 175 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | 245 |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 62 W | 62 W |
| Maximum pulsed drain current (IDM) | 81 A | 81 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Tin (Sn) | Tin (Sn) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | 30 |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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