0.2A, 30V, 2.5ohm, N-CHANNEL, Si, POWER, MOSFET
Parameter Name | Attribute value |
package instruction | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 30 V |
Maximum drain current (ID) | 0.2 A |
Maximum drain-source on-resistance | 2.5 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 code | R-PDSO-G3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | ENHANCEMENT MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Base Number Matches | 1 |