PBLS6001D,115 datasheet, PDF - EEWORLD Datasheet

PBLS6001D,115: Description60 V PNP BISS loadswitch; CategoryDiscrete semiconductor The transistor; File Size126KB，16 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBLS6001D,115 Overview

60 V PNP BISS loadswitch

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Parts packaging code	TSOP
package instruction	PLASTIC, SC-74, 6 PIN
Contacts	6
Manufacturer packaging code	SOT457
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Other features	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G6
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN AND PNP
Maximum power dissipation(Abs)	0.6 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	185 MHz
Base Number Matches	1

	PBLS6001D,115	PBLS6001D
Description	60 V PNP BISS loadswitch	60 V PNP BISS loadswitch
Is it Rohs certified?	conform to	conform to
Parts packaging code	TSOP	SC-74
package instruction	PLASTIC, SC-74, 6 PIN	PLASTIC, SC-74, 6 PIN
Contacts	6	6
Reach Compliance Code	compli	compliant
ECCN code	EAR99	EAR99
Other features	BUILT IN BIAS RESISTOR RATIO IS 1	BUILT IN BIAS RESISTOR RATIO IS 1
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30	30
JESD-30 code	R-PDSO-G6	R-PDSO-G6
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	6	6
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN AND PNP	NPN AND PNP
Maximum power dissipation(Abs)	0.6 W	0.6 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	185 MHz	185 MHz

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