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2036-42SM-LF

Description
IC TELECOM, SURGE PROTECTION CIRCUIT, XSS, ROHS COMPLIANT PACKAGE, Telecom Protection Circuit
CategoryWireless rf/communication    Telecom circuit   
File Size251KB,3 Pages
ManufacturerBourns
Websitehttp://www.bourns.com
Download Datasheet Parametric View All

2036-42SM-LF Overview

IC TELECOM, SURGE PROTECTION CIRCUIT, XSS, ROHS COMPLIANT PACKAGE, Telecom Protection Circuit

2036-42SM-LF Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
JESD-30 codeX-XXSS-X
Humidity sensitivity level1
Number of functions1
Maximum operating temperature85 °C
Minimum operating temperature-55 °C
Package body materialUNSPECIFIED
Package shapeUNSPECIFIED
Package formSPECIAL SHAPE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
surface mountNO
Telecom integrated circuit typesSURGE PROTECTION CIRCUIT
Temperature levelOTHER
Terminal formUNSPECIFIED
Terminal locationUNSPECIFIED
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
*R
oH
VE S CO
AV R M
AI SIO PL
LA N IA
BL S NT
E
Features
Balanced Mini-TRIGARD™ Series
High surge current rating, low insertion loss
(5 mm diameter, 7.3 mm length)
Ideal for board level protection of
broadband circuits
Leadless, surface mount for economical
assembly
Stable breakdown throughout life
UL Recognized
RoHS compliant* version available
2036-xx-SM Precision Gas Discharge Tube Surge Protector
Bourns now offers a surface mount (SM) 3-electrode Gas Discharge Tube (GDT) surge protection device. The industry-leading quality
and features of the Bourns
®
miniature 2036 TRIGARD™ series GDT continues in this new SM version for “pick and place”
manufacturing techniques. The 2036 SM device is ideal for board level protection of high bandwidth applications such as xDSL,
cable broadband and high speed Ethernet, due to its high energy handling capability, long and stable life performance and low
capacitance of less than 2 pF. Bourns subminiature family of GDTs measure only 5 mm in diameter and are the smallest high
performance GDTs in the telecom industry. Bourns
®
GDTs are designed to prevent damage from transient disturbances by acting as
a “crowbar” in creating a short-to-ground circuit during conduction. When a voltage transient surge exceeds the defined breakdown
voltage level of the GDT, the device becomes ionized and conduction takes place within a fraction of a microsecond. When the surge
passes and system voltage returns to normal levels, the GDT returns to its high-impedance (off) state.
Characteristics
Test Methods per ITU-T (CCITT) K.12, IEEE C62.31
Characteristic
DC Sparkover ±20 % @ 100 V/s
Impulse Sparkover
100 V/µs
1000 V/µs
Characteristic
DC Sparkover ±20 % @ 100 V/s
Impulse Sparkover
100 V/µs
1000 V/µs
2036-07
75 V
250 V
525 V
2036-30
300 V
500 V
650 V
2036-09
90 V
250 V
550 V
2036-35
350 V
600 V
750 V
Model No.
2036-15
2036-20
150 V
200 V
350 V
500 V
425 V
575 V
2036-23
230 V
450 V
600 V
2036-47
470 V
750 V
950 V
2036-25
250 V
475 V
625 V
2036-60
600 V
850 V
1100 V
Model No.
2036-40
2036-42
400 V
420 V
650 V
825 V
675 V
850 V
75 ns
10
10
Ω
70 V
10 V
0.5 A
2 pF
150 ms
Impulse Transverse Delay................................ 100 V/μs............................................................<
Insulation Resistance (IR) ................................ 100 V (50 V for Model 2036-07 & 2036-09) ......>
Glow Voltage ................................................... 10 mA................................................................~
Arc Voltage ...................................................... 1 A.....................................................................~
Glow-Arc Transition Current .......................................................................................................<
Capacitance .................................................... 1 MHz ...............................................................<
DC Holdover Voltage
1
.................................... >135 V, (52 V for Model 2036-07, & -09, ..........<
......................................................................... 80 V for Model 2036-15)
Impulse Discharge Current .............................. 20000 A, 8/20 µs
2
.............................................
10000 A, 8/20 µs...............................................>
200 A, 10/1000 µs ............................................>
2000 A, 10/350 µs.............................................
200 A, 10/700 µs ..............................................>
Alternating Discharge Current ......................... 20 Arms, 1 s
2
....................................................
10 Arms, 1 s ......................................................>
Operating Temperature...............................................................................................................
Climatic Category (IEC 60068-1) ................................................................................................
1 operation minimum
10 operations
300 operations
1 operation
500 operations
1 operation minimum
10 operations
-55 to +85 °C
40/90/21
Notes:
• UL Recognized component, UL File E153537.
• No model number marking on tube; date code and voltage only: month year digits, xxxV (e.g. 0209 400V).
• The rated discharge current for Mini-TRIGARD™ GDTs is the total current equally divided between each line to ground.
• Surface Mount (SM) parts may show a temporary increase in DCBD after the solder reflow process. Most devices will recover
within 24 hours time. It should be noted that there is no quality defect nor change in protection levels during the temporary
change in DCBD.
• Sparkover limits after life ±25 % (-25 %,+30 % for Model 2036-07, 2036-09 and 2036-60), IR >10
8
Ω.
• Operating characteristics per RUS PE-80 and Telcordia GR 1361 available on request.
• Line to Line voltage is approximately 1.8 to 2 times the stated Line to Ground breakdown voltage.
• At delivery AQL 0.65 Level II, DIN ISO 2859.
1
Network applied.
*RoHS Directive 2002/95/EC Jan 27, 2003 including Annex.
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
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