BST51,115 datasheet, PDF - EEWORLD Datasheet

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BST51,115: Description1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA; CategoryDiscrete semiconductor The transistor; File Size124KB，8 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BST51,115 Overview

1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA

BST51,115 Parametric

Parameter Name	Attribute value
Brand Name	NXP Semiconduc
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-89
package instruction	PLASTIC, SC-62, TO-243, 3 PIN
Contacts	3
Manufacturer packaging code	SOT89
Reach Compliance Code	compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	2000
JEDEC-95 code	TO-243AA
JESD-30 code	R-PSSO-F3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	1 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	FLAT
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	1500 ns
Maximum opening time (tons)	400 ns
VCEsat-Max	1.3 V

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DISCRETE SEMICONDUCTORS

DATA SHEET

dbook, halfpage

M3D109

BST50; BST51; BST52

NPN Darlington transistors

Product data sheet

Supersedes data of 2001 Feb 20

2004 Dec 09

BST51,115 Related Products

	BST51,115	BST50,115	BST51,135	BST52,115	BST52,135
Description	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA	1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA	1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA
Brand Name	NXP Semiconduc	NXP Semiconduc	NXP Semiconduc	NXP Semiconduc	NXP Semiconduc
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	NXP	NXP	NXP	NXP	NXP
Parts packaging code	SOT-89	SOT-89	SOT-89	SOT-89	SOT-89
package instruction	PLASTIC, SC-62, TO-243, 3 PIN	PLASTIC, SC-62, TO-243, 3 PIN	PLASTIC, SC-62, TO-243, 3 PIN	PLASTIC, SC-62, TO-243, 3 PIN	PLASTIC, SC-62, TO-243, 3 PIN
Contacts	3	3	3	3	3
Manufacturer packaging code	SOT89	SOT89	SOT89	SOT89	SOT89
Reach Compliance Code	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	1 A	1 A	1 A	1 A	1 A
Collector-emitter maximum voltage	60 V	45 V	60 V	80 V	80 V
Configuration	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)	2000	2000	2000	2000	2000
JEDEC-95 code	TO-243AA	TO-243AA	TO-243AA	TO-243AA	TO-243AA
JESD-30 code	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3	R-PSSO-F3
JESD-609 code	e3	e3	e3	e3	e3
Humidity sensitivity level	1	1	1	1	1
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Maximum power dissipation(Abs)	1 W	1 W	1 W	1 W	1 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)	Tin (Sn)
Terminal form	FLAT	FLAT	FLAT	FLAT	FLAT
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz	200 MHz	200 MHz	200 MHz
Maximum off time (toff)	1500 ns	1500 ns	1500 ns	1500 ns	1500 ns
Maximum opening time (tons)	400 ns	400 ns	400 ns	400 ns	400 ns
VCEsat-Max	1.3 V	1.3 V	-	1.3 V	1.3 V

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