maximize power conversion efficiency, providing a low
R
DS(ON)
and low gate charge. The FDS6680S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology. The performance of
the FDS6680S as the low-side switch in a synchronous
rectifier is indistinguishable from the performance of the
FDS6680 in parallel with a Schottky diode.
Features
•
11.5 A, 30 V.
R
DS(ON)
= 0.011
Ω
@ V
GS
= 10 V
R
DS(ON)
= 0.017
Ω
@ V
GS
= 4.5 V
•
•
•
Includes SyncFET Schottky body diode
Low gate charge (17nC typical)
High performance trench technology for extremely low
R
DS(ON)
and fast switching
High power and current handling capability
Applications
•
DC/DC converter
•
Motor drives
•
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±20
(Note 1a)
Units
V
V
A
W
11.5
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
STG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDS6680S
2000
Fairchild Semiconductor Corporation
Device
FDS6680S
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
FDS6680S Rev C (W)
FDS6680S
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
===∆T
J
I
DSS
I
GSSF
I
GSSR
V
GS(th)
∆V
GS(th)
===∆T
J
R
DS(on)
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
DS
= 24 V,
V
GS
= 20 V,
V
GS
= –20 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
Min
30
Typ
Max Units
V
Off Characteristics
19
500
100
–100
1
2
-3.3
9.5
13.5
17
50
27
2010
526
186
10
10
34
14
V
DS
= 15 V,
V
GS
= 5 V
I
D
= 11.5 A,
17
6.2
5.5
3.5
(Note 2)
(Note 2)
(Note 3)
mV/°C
µA
nA
nA
V
mV/°C
11
17
23
mΩ
On Characteristics
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 1 mA, Referenced to 25°C
V
GS
= 10 V,
I
D
= 11.5 A
I
D
= 9.5 A
V
GS
= 4.5 V,
V
GS
=10 V, I
D
=11.5A, T
J
=125°C
V
GS
= 10 V,
V
DS
= 15 V,
V
DS
= 5 V
I
D
= 11.5 A
3
I
D(on)
g
FS
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
t
rr
Q
rr
A
S
pF
pF
pF
18
18
55
23
24
ns
ns
ns
ns
nC
nC
nC
A
V
nS
nC
Dynamic Characteristics
V
DS
= 15 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DS
= 15 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
Ω
Drain–Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V, I
S
= 3.5 A
V
GS
= 0 V, I
S
= 7 A
I
F
= 11.5A,
d
iF
/d
t
= 300 A/µs
0.45
0.6
20
19.7
0.7
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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