VRF154FL
VRF154FLMP
50V, 600W, 80MHz
RF POWER VERTICAL MOSFET
The VRF154FL is a gold-metallized silicon n-channel RF power transis-
tor designed for broadband commercial and military applications requiring
high power and gain without compromising reliability, ruggedness, or inter-
modulation distortion.
S
D
S
G
FEATURES
• Improved Ruggedness V
(BR)DSS
= 170V
• Designed for 2 - 100MHz Operation
• 600W with 17dB Typical Gain @ 30MHz, 50V
• Excellent Stability & Low IMD
• Common Source Configuration
• Available in Matched Pairs
• Nitride Passivated
• Economical Flangeless Package
• Refractory Gold Metallization
• High Voltage Replacement for MRF154
• RoHS Compliant
Maximum Ratings
Symbol
V
DSS
I
D
V
GS
P
D
T
STG
T
J
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Gate-Source Voltage
Total Device dissipation @ T
C
= 25°C
Storage Temperature Range
Operating Junction Temperature Max
All Ratings: T
C
=25°C unless otherwise specified
VRF154FL(MP)
170
60
±40
1350
-65 to 150
200
Unit
V
A
V
W
°C
Static Electrical Characteristics
Symbol
V
(BR)DSS
V
DS(ON)
I
DSS
I
GSS
g
fs
V
GS(TH)
Parameter
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 100mA)
On State Drain Voltage (I
D(ON)
= 40A, V
GS
= 10V)
Zero Gate Voltage Drain Current (V
DS
= 100V, V
GS
= 0V)
Gate-Source Leakage Current (V
DS
= ±20V, V
DS
= 0V)
Forward Transconductance (V
DS
= 10V, I
D
= 40A)
Gate Threshold Voltage (V
DS
= 10V, I
D
= 100mA)
16
2.9
3.6
4.4
Min
170
Typ
180
3.0
5.0
4.0
4.0
Max
Unit
V
mA
μA
mhos
V
Thermal Characteristics
Symbol
R
θ
JC
R
θ
JHS
Characteristic
Junction to Case Thermal Resistance
Junction to Sink Thermal Resistance
(Use High Efficiency Thermal Joint Compound and Planar Heat Sink
Surface.)
Min
Typ
Max
0.13
Unit
°C/W
050-4939 Rev F 9-2010
0.22
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
C
ISS
C
oss
C
rss
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
= 0V
V
DS
= 50V
f = 1MHz
Min
Typ
1750
775
135
VRF154FL(MP)
Max
Unit
pF
Functional Characteristics
Symbol
G
PS
η
D
IMD
(d3)
Parameter
f = 30MHz, V
DD
= 50V, I
DQ
= 800mA, P
out
= 600W
f = 30MHz, V
DD
= 50V, I
DQ
= 800mA, P
out
= 600W
PEP
f1 = 30MHz, f2 = 30.001MHz, V
DD
= 50V, I
DQ
= 800mA, P
out
= 600W
PEP 1
Min
Typ
17
45
-25
Max
Unit
dB
%
dBc
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Typical Performance Curves
160
140
120
I
D
,
DRAIN CURRENT (A)
100
80
60
40
20
0
V
0
5
10
15
20
9.0V
8.0V
7.0V
6.0V
5.0V
V
GS
= 4.0V
25
30
14V
140
120
11V
100
I
D
, DRAIN CURRENT (A)
80
60
T
J
= 125°C
40
20
0
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
250μs PULSE
TEST<0.5 % DUTY
CYCLE
T
J
= -55°C
T
J
= 25°C
0
2
4
6
8
10
DS(ON
)
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
1.0E−8
100
C
iss
1.0E−9
C
oss
C
rss
I
D
, DRAIN CURRENT (V)
I
DMax
C, CAPACITANCE (F)
10
Rds(on)
PD Max
050-4939 Rev F 9-2010
1.0E−10
0
25
50
75
100
1
T
J
=
125°C
T
C
=
75°C
1
10
100
BVdss Line
800
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
Typical Performance Curves
0.14
Z
JC
, THERMAL IMPEDANCE (°C/W)
θ
0.12
0.10
0.08
0.5
0.06
0.04
0.02
0
10
-5
10
-4
10
-3
0.3
Note:
VRF154FL(MP)
D = 0.9
0.7
PDM
t1
t2
0.1
0.05
SINGLE PULSE
10
-2
0.1
t
1
= Pulse Duration
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
1
10
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
1200
1000
1200
Freq=30MHz
50V
Freq=65MHz
50V
1000
OUTPUT POWER (W
PEP
)
V
DS
= 40V
V
DS
= 40V
OUTPUT POWER (W
PEP
)
800
600
400
200
0
800
600
400
200
0
0
5
10
15
P
out
, INPUT POWER (WATTS PEP)
Figure 6. P
OUT
versus P
IN
20
0
10
20 30
40 50 60 70
P
out
, INPUT POWER (WATTS PEP)
Figure 7. P
OUT
versus P
IN
80
VRF154FL(MP)
30MHz Test Circuit
Vbias
R1
R2
C14
L1
C1
RF
Input
C1, C2, C6, C7 ARCO 465 mica trimmer
C3 1800pF ATC700B ceramic
C4 680pF metal clad 500V mica
C5 390pF metal clad 500V mica
C8 100pF ATC 700E ceramic
C9 120pF ATC 700E ceramic
C10 - C13 .01uF 100V ceramic SMT
C14 - C16 .1uF 100V ceramic SMT
50V
L3
C12
C10
C11
L2
R3
L4
C4
L5
C5
C6
C7
C8
L6
C15
C13
C16
C9
Output
C2
C3
2-50MHz 1kW Wideband Amplifier
BIAS
-
30 - 40 V
+
R5
R4
IC1
R7
C1
R3
D3
R2
C3
R8
T1
C9
T2
R10
D.U.T.
R14
C11
R12
R6
INPUT
R1
C2
C8
R11
XTR
XTR
C6
C7
D2
R13
R9
D.U.T.
C5
C4
OUTPUT
C10
L1
L2
+
+
40 V
-
D1
TEMP. TRACKING
C1 - 1000pF Ceramic
C2, C3, C4, C8, C9, C10, C11 -0.1μF Ceramic
C5 - 10μF / 100 V Electrolytic
C6, C7 - 0.1μF Ceramic, (ATC 200/823 or Equivalent)
D1 - 28V Zener, 1N5362 or Equivalent
D3 - 1N4148
IC1 - MC1723
L1, L2 - Fair-Rite Products Corp. Ferrite Beads
#2673000801
R1, R2, R3 - 10k Trimpot
R4 - 1.0 k /1.0W
R5 - 10 Ohms
R6 - 2.0k
R7 - 10k
R8 - Thermistor, 10k (25°C), 2.5k (75°C)
R9, R10 - 100 Ohms
R11, R12 - 1.0k
R13, R14 - 50Ω, 2 x 100Ω 2W Carbon in Parallel
T1 - 9:1 Transformer, Trifilar and Balun Wound on
Separate Fair-Rite Products Corp. Balun Cores
#286100012, 5 Turns Each.
T2 - 1:9 Transformer Balun 50 Ohm CO-AX Cable
RG-188,Low Impedance Lines W.L. Gore
16 Ohms CO-AX Type CXN 1837. Each Winding
Threaded Through Two Fair-Rite Products Corp.
#2661540001 Ferrite Sleeves (6 Each).
XTR - VRF154
050-4939 Rev F 9-2009
VRF154FL(MP)
Adding MP at the end of P/N specifies a matched pair where V
GS(TH)
is matched between the two parts. V
TH
values
are marked on the devices per the following table.
Code
A
B
C
D
E
F
G
H
J
K
Vth Range
2.900 - 2.975
2.975 - 3.050
3.050 - 3.125
3.125 - 3.200
3.200 - 3.275
3.275 - 3.350
3.350 - 3.425
3.425 - 3.500
3.500 - 3.575
3.575 - 3.650
Code 2
M
N
P
R
S
T
W
X
Y
Z
Vth Range
3.650 - 3.725
3.725 - 3.800
3.800 - 3.875
3.875 - 3.950
3.950 - 4.025
4.025 - 4.100
4.100 - 4.175
4.175 - 4.250
4.250 - 4.325
4.325 - 4.400
V
TH
values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
Thermal Considerations
Mounting:
and
Package
.466
D
The rated 1350W power dissipation is only available
when the package mounting surface is at 25°C and
the junction temperature is 200 °C. The thermal re-
sistance between junctions and case mounting surface
is 0.13°C/W. When installed, an additional thermal im-
pedance of 0.09°C/W between the package base and
the mounting surface is smooth and
fl
at. Thermal joint
compound must be used to reduce the effects of small
surface irregularities. The heatsink should incorporate
a copper heat spreader to obtain best results.
The lid
maintains the required mounting pressure while al-
lowing for thermal expansion of both the device and
the heat sink. Four 6-32 (M3.5) screws provide the
minimum 125 lb. required mounting force. T=4-6 in-lb.
Please refer to App Note 1802 "Mounting Instructions
for Flangeless Packages."
.250
.150r
.500
G
S
.250
.750
1.000
1
.125d
.500
2
3
1.250
1.500
4
.300
.200
.005 .040
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and
mounting
fl
ange is beryllium oxide. Beryllium oxide dust
is highly toxic when inhaled. Care must be taken during
handling and mounting to avoid damage to this area.
These devices must never be thrown away with general
industrial or domestic waste.
050-4939 Rev F 9-2010
PIN 1 - DRAIN
PIN 2 - SOURCE
PIN 3 - SOURCE
PIN 4 - GATE
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.
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