SM120MH~SM1100MH
Elektronische Bauelemente
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
Batch process design, excellent power dissipation offers.
better reverse leakage current and thermal resistance.
Low profile surface mounted application.
in order to optimize board space.
Low power loss and low forward voltage drop
High surge, high current capability, and high efficiency.
Fast switching for high efficiency.
Guard-ring for overvoltage protection.
Ultra high-speed switching
Silicon epitaxial planar chip, metal silicon junction.
SOD-123MH
A
B
F
D
C
PACKAGING INFORMATION
E
E
Small plastic SMD package.
Case: Molded plastic
Epoxy: UL94-V0 rate flame retardant
Weight: 0.0110 g (Approximately)
REF.
Cathode
Anode
A
B
C
Millimeter
Min.
Max.
3.30
3.70
1.50
1.90
0.60
1.00
REF.
D
E
F
Millimeter
Min.
Max.
3.10 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
MARKING CODE
Part Number
SM120MH
SM130MH
SM140MH
SM150MH
Marking Code
12
13
14
15
Part Number
SM160MH
SM180MH
SM1100MH
Marking Code
16
18
10
MAXIMUM RATINGS
(T
a
= 25°C unless otherwise specified.)
PART NUMBERS
PARAMETERS
Recurrent Peak
Reverse Voltage (Max.)
RMS Voltage (Max.)
Reverse Voltage (Max.)
Forward Voltage (Max.)
Forward
Rectified Current (Max.)
Peak Forward Surge Current
SYMBOL
SM
120
MH
SM
130
MH
SM
140
MH
SM
150
MH
SM
160
MH
SM
180
MH
SM
1100
MH
UNITS
TESTING CONDITIONS
V
RRM
V
RMS
V
R
V
F
I
O
20
14
20
30
21
30
0.50
40
28
40
50
35
50
0.70
1.0
60
42
60
80
56
80
100
70
100
0.85
V
V
V
V
A
See Fig.1
8.3ms single half sine-wave
superimposed on rated load
(JEDEC method)
I
FSM
25
0.5
10
98
120
-65 ~ 175, -55 to 125
-65 ~ 175, -55 to 150
A
Reverse Current (Max.)
Thermal Resistance (Typ.)
Diode Junction
Capacitance (Typ.)
Storage and Operating
Temperature Range
I
R
R
JA
C
J
T
STG
, T
J
mA
°C/W
pF
°C
V
R
=V
RRM
, T
a
=25°C
V
R
=V
RRM
, T
a
=125°C
Junction to ambient
f=1MHz and applied 4V DC
reverse voltage
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Jul-2010 Rev. B
Page 1 of 2
SM120MH~SM1100MH
Elektronische Bauelemente
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
0-
M
H
0.8
MH
0-
10
M1
~S
MH
0-
15
H
-M
SM
40
M1
~S
MH
0-
12
SM
0.6
0.4
0.2
0
0
20
40
60
80
10
SM
12
0-
M
H~
SM
14
16
0-
M
H
3.0
1.0
H~
SM
100
120
140
160
180
200
SM
15
0-
M
AMBIENT TEMPERATURE,( C)
0-
18
SM
M
-M
00
11
SM
H~
H
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
25
0.1
PEAK FORWARD SURGE CURRENT,(A)
20
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
15
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLT
AGE,(V)
10
5
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
T
J
=75 C
.1
T
J
=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
16-Jul-2010 Rev. B
Page 2 of 2
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