200 A, 80 V, SILICON, RECTIFIER DIODE
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Microsemi |
| Contacts | 2 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Other features | REVERSE ENERGY TESTED |
| application | GENERAL PURPOSE |
| Shell connection | CATHODE |
| Configuration | COMMON CATHODE, 2 ELEMENTS |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| JESD-30 code | R-XUFM-X2 |
| Maximum non-repetitive peak forward current | 3000 A |
| Number of components | 2 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -55 °C |
| Maximum output current | 200 A |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 80 V |
| surface mount | NO |
| technology | SCHOTTKY |
| Terminal form | UNSPECIFIED |
| Terminal location | UPPER |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
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