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DB107

Description
1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size247KB,3 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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DB107 Overview

1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

DB107 Parametric

Parameter NameAttribute value
MakerSECOS
Reach Compliance Codecompliant
Elektronische Bauelemente
VOLTAGE 50 V ~ 1000 V
1.0 Amp Surface Mount Bridge Rectifiers
DB101 ~ DB107
RoHS compliant product
A suffix of “-C” specifies halogen & lead-free
FEATURES
DB-1
D
Low forward voltage drop, high current capability
Rating to 1000V PRV
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic technique
results in inexpensive products
Lead tin Pb / Sn copper
The plastic material has UL flammability classification 94V-0
C
~
F
A
~
J
G
MECHANICAL DATA
H
REF.
A
B
C
D
E
E
Millimeter
Min.
Max.
8.20
9.30
7.60
8.90
2.90
3.40
6.20
6.50
5.00
5.20
REF.
F
G
H
J
B
Millimeter
Min.
Max.
0.55 REF.
1.50 REF.
3.90
4.90
-
-
Polarity: As marked on Body
Weight:0.02 ounces, 0.38 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.
PARAMETERS
Peak Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Maximum Average Forward Rectified Current
@T
A
=40℃
Peak Forward Surge Current 8.3 ms Single Half
Sine-Wave Super Imposed on Rated Load
(JEDEC Method)
Maximum Forward Voltage at 1.5 A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance (Note2)
2
SYMBOL
DB
101
DB
DB
DB
DB
DB
DB
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
I
2
t
C
J
R
θJA
T
J
, T
STG
50
35
50
100
70
100
102
200
140
200
103
400
280
400
1.0
50
1.1
10
500
10.4
25
40
-55 ~ 150
104
600
420
600
105
800
560
800
106
1000
700
1000
107
UNIT
V
A
A
V
uA
A
2
s
pF
℃/W
@T
J
=25℃
@T
J
=125℃
Operating and Storage temperature range
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC
2. Thermal resistance from junction to ambient mounted on P.C.B. with 0.5*0.5"(13*13mm) copper pads.
10-August-2009 Rev. B
Page 1 of 2

DB107 Related Products

DB107 DB102 DB103 DB106 DB101_09
Description 1 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE 1 A, SILICON, BRIDGE RECTIFIER DIODE
Maker SECOS SECOS SECOS SECOS -
Reach Compliance Code compliant compli compli compliant -

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