FRS130R4 datasheet, PDF - EEWORLD Datasheet

FRS130R4: DescriptionPower Field-Effect Transistor, 12A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA; CategoryDiscrete semiconductor The transistor; File Size144KB，4 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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FRS130R4 Overview

Power Field-Effect Transistor, 12A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	RADIATION HARDENED
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.195 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	R-MSFM-P3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	50 W
Maximum power dissipation(Abs)	50 W
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON
Maximum off time (toff)	236 ns
Maximum opening time (tons)	472 ns

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