2SA1960RF datasheet, PDF - EEWORLD Datasheet

2SA1960RF: DescriptionRF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-92, TO-92(1), 3 PIN; CategoryDiscrete semiconductor The transistor; File Size128KB，5 Pages; ManufacturerHitachi （Renesas ）; Websitehttp://www.renesas.com/eng/

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2SA1960RF Overview

RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-92, TO-92(1), 3 PIN

Parameter Name	Attribute value
Parts packaging code	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.3 A
Collector-based maximum capacity	4 pF
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	1300 MHz
Base Number Matches	1

	2SA1960RF	2SA1960RR
Description	RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-92, TO-92(1), 3 PIN	RF Small Signal Bipolar Transistor, 0.3A I(C), 1-Element, Silicon, NPN, TO-92, TO-92(1), 3 PIN
Parts packaging code	TO-92	TO-92
package instruction	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.3 A	0.3 A
Collector-based maximum capacity	4 pF	4 pF
Collector-emitter maximum voltage	80 V	80 V
Configuration	SINGLE	SINGLE
JEDEC-95 code	TO-92	TO-92
JESD-30 code	O-PBCY-T3	O-PBCY-T3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	1300 MHz	1300 MHz
Base Number Matches	1	1

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