TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
•
Glass Passivated Die
•
500 Amps Surge Rating
Qualified per MIL-PRF-19500/297
•
Glass to Metal Seal Construction
•
VRRM to 1000 Volts
DEVICES
LEVELS
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (T
C
= +25°C unless otherwise noted)
Parameters / Test Conditions
Peak Reverse Voltage
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
Symbol
Value
100
200
400
600
800
1000
35
500
0.8
-65°C to 175°C
-65°C to 175°C
Unit
V
R
V
Average Forward Current, T
C
= 150°
Peak Surge Forward Current @ t
p
= 8.3ms, half sinewave,
T
C
= 150°C
Thermal Resistance, Junction to Case
Operating Case Temperature Range
Storage Temperature Range
I
F
I
FSM
R
θJC
T
j
T
STG
A
A
°C/W
°C
°C
ELECTRICAL CHARACTERISTICS (T
A
= +25°C, unless otherwise noted)
Parameters / Test Conditions
Forward Voltage
I
FM
= 110A, T
C
= 25°C*
Forward Voltage
I
FM
= 500A, T
C
= 150°C*
Reverse Current
V
RM
= 100, T
j
= 25°C
V
RM
= 200, T
j
= 25°C
V
RM
= 400, T
j
= 25°C
V
RM
= 600, T
j
= 25°C
V
RM
= 800, T
j
= 25°C
V
RM
= 1000, T
j
= 25°C
Reverse Current
V
RM
= 100, T
j
= 150°C
V
RM
= 200, T
j
= 150°C
V
RM
= 400, T
j
= 150°C
V
RM
= 600, T
j
= 150°C
V
RM
= 800, T
j
= 150°C
V
RM
= 1000, T
j
= 150°C
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184
1N1186
1N1188
1N1190
1N3766
1N3768
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
1N1184R
1N1186R
1N1188R
1N1190R
1N3766R
1N3768R
Symbol
V
FM
V
FM
Min.
Max.
1.4
2.3
Unit
V
V
DO-203AB (DO-5)
I
RM
10
μA
I
RM
1
mA
* Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note:
T4-LDS-0138 Rev. 1 (091729)
Page 1 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
GRAPHS
FIGURE 1
TYPICAL FORWARD CHARACTERISTICS
FIGURE 3
FORWARD CURRENT DERATING
FIGURE 4
TRANSIENT THERMAL IMPEDANCE
FIGURE 2
TYPICAL REVERSE CHARACTERISTICS
T4-LDS-0138 Rev. 1 (091729)
Page 2 of 3
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http://www.microsemi.com
HIGH RELIABILITY SILICON POWER RECTIFIER
PACKAGE DIMENSIONS
NOTES:
1
2
3
4
5
6
7
8
9
Dimensions are in inches.
Millimeters are given for general information only.
Units must not be damaged by torque of 30 inch-pounds applied to
.250-28 UNF-28 nut assembled on thread.
Diameter of unthreaded portion .249 inch (6.32 mm) max and .220 inch
(5.59 mm) min.
Complete threads to extend to within 2.5 threads of seating plane.
Angular orientation of this terminal is undefined.
Max pitch diameter of plated threads shall be basic pitch diameter .2268
inch (5.76 mm) reference FEDSTD-H28.
A chamfer or undercut on one or both ends of the hex portion is optional;
minimum base diameter at seating plane. .600 inch (15.24 mm).
In accordance with ASME Y14.5M, diameters are equivalent to
φx
symbology.
Ltr
OAH
CH
HT
SL
HT1
B
CD
HF
J
φT
C
M
Dimensions
Inches
Millimeters
Min
Max
Min
Max
1.000
25.40
.450
11.43
.115
.200
2.93
5.08
.422
.453
10.72
11.50
.060
1.53
.250
.375
6.35
9.52
.667
16.94
.667
.687
16.95
17.44
.156
3.97
.140
.175
3.56
04.44
.080
2.03
.030
0.77
Physical dimensions, (all device types) DO-5
T4-LDS-0138 Rev. 1 (091729)
Page 3 of 3
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