EEWORLDEEWORLDEEWORLD

Part Number

Search
 PDF

ML4333-276

Description
40V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size144KB,6 Pages
ManufacturerTE Connectivity
Websitehttp://www.te.com
Download Datasheet Parametric View All

ML4333-276 Overview

40V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

ML4333-276 Parametric

Parameter NameAttribute value
MakerTE Connectivity
package instructionO-CXMW-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage40 V
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JESD-30 codeO-CXMW-G2
Number of terminals2
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formMICROWAVE
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationUNSPECIFIED
Varactor Diode ClassificationABRUPT

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号