AHK6030L
30V N-Channel Power MOSFET
General Description
Utilizing
Analogic
Tech’s
state-of-the-art
â
TrenchDMOS process, the AHK6030L sets a
new standard in current handling capability and
efficiency for surface mount power MOSFETs.
Gate charge and R
DS(ON)
have been optimized and
package inductance minimized to provide high
efficiency for DC-DC converters.
Features
•=
•=
•=
•=
•=
PWMSwitch
TM
V
DS(MAX)
= 30V
I
D(MAX)(a)
= 44 A @ 25
°
C
I
APP(MAX)
= 17A in typical computer application
Low Gate Charge
Low R
DS(ON)
:
13.5 m
Ω=
(max), 9.5 m
Ω=
(typ) @V
GS
= 10V
20 m
Ω=
(max), 14 m
Ω=
(typ) @V
GS
= 4.5V
Applications
•=
DC-DC converters for CPU’s
•=
High Current Load Switch
DPAK-L Package
Drain-Connected Tab
DPAK Package
Preliminary Information
Drain-Connected Tab
G
G
S
S
Absolute Maximum Ratings
(T
A
=25
°
C unless otherwise noted)
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Description
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ T
J
=150
°
C
(a)
Pulsed Drain Current
(a)
Continuous Source Current (Source-Drain Diode)
(a)
Maximum Power Dissipation
(a)
Operating Junction and Storage Temperature Range
T
A
= 25
°
C
T
A
= 70
°
C
Value
30
±
20
±
44
±
52
23
39
25
-55 to 150
Units
V
A
W
°
C
Thermal Resistance
R
θJA
R
θJC
Maximum Junction-to-Ambient
(a)
Maximum Junction-to-Case
(a)
96
3.2
°
C/W
°
C/W
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
6030L.2001.05.0.91
AHK6030L
30V N-Channel Power MOSFET
Electrical Characteristics
(TJ=25
°
C unless otherwise noted)
Symbol
DC Characteristics
BV
DS
R
DS(ON)
I
D(ON)
V
GS(th)
I
GSS
I
DSS
g
fs
Q
G
Q
GS
Q
GD
Drain-Source Breakdown
Voltage
Drain-Source ON-Resistance
On-State Drain Current
Gate Threshold Voltage
Gate-Body Leakage Current
Drain Source Leakage Current
Forward Transconductance
V
GS
=0V, I
D
=250µA
V
GS
=10V, I
D
=10A
V
GS
=4.5V, I
D
=5A
V
GS
=10V ,V
DS
=5V (Pulsed)
V
GS
=V
DS
, I
D
=250µA
V
GS
=±20V, V
DS
=0V
V
GS
=0V,V
DS
=30V
V
GS
=0V,V
DS
=30V, T
A
=70°C
VDS=15V, ID=10A
30
9.5
14
56
1.0
±100
1
25
19
36
7
6
17
11
48
36
1
52
13.5
20
V
mΩ
A
V
nA
µA
S
nC
nC
nC
ns
ns
ns
ns
V
A
Description
Conditions
Min
Typ
Max
Units
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
Turn-ON Delay
t
R
Turn-ON Rise Time
t
D(OFF)
Turn-OFF Delay
t
F
Turn-OFF Fall Time
Source-Drain Diode Characteristics
V
SD
Source-Drain Forward Voltage
I
S
Continuous Diode Current
V
DS
=15V, I
D
=15A, V
GS
=10V
V
DD
=15V, V
GS
=10V, I
D
=15A,
R
G
=6Ω
30
20
80
64
1.5
23
V
GS
=0, I
S
=28A
Notes:
(a)
Based on thermal dissipation from junction to case. R
θ
JC
+ R
θ
CA
= R
θ
JA
where the case thermal reference is defined as
the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by design, however R
θ
CA
is determined by the PCB
design. Package current is limited to 26A DC.
(b)
With minimum copper pads on 1 x 1 inch FR4 board.
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
6030L.2001.05.0.91
AHK6030L
30V N-Channel Power MOSFET
Typical Characteristics
Output Characteristics
60.00
60
Transfer Characteristics
V
D
=V
G
10V
5V
45.00
50
40
6V
I
D
(A)
I
DS
(V)
30.00
4.5V
4V
30
20
15.00
3V
0.00
0.00
1.00
2.00
3.00
4.00
5.00
10
0
0
1
2
3
4
5
V
DS
(V)
V
GS
(V)
Normalized On-Resistance vs.
Drain Current
3
On-Resistance vs. Gate to Source Voltage
40
10A
V
GS
=4.5V
20A
30A
Normalized R
DS(ON)
2
1.5
1
0.5
0
0.00
R
DS(ON)
(mΩ)
2.5
V
GS
=3.5V
V
GS
=4V
30
20
V
GS
=5V
10.00
V
GS
=6V
20.00
V
GS
=10V
30.00
10
0
0
2
4
6
8
10
I
D
(A)
V
GS
(V)
Gate Charge
10
8
Source-Drain Diode Forward Voltage
100
V
D
=15V
R
D
=1.2Ω
10
V
GS
(V)
4
2
0
0
10
20
30
40
I
S
(A)
1
0.1
0.4
6
0.6
0.8
1
1.2
Q
g
, Charge (nC)
V
SD
(V)
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
6030L.2001.05.0.91
AHK6030L
30V N-Channel Power MOSFET
Ordering Information
Part Number
Bulk
N/A
MPQ
N/A
Tape and Reel
AHK6030LINY-T1
MPQ
2100
Package
TO-252 (DPAK)
Marking
6030L
Package Information
TO-252 (DPAK)
6.5
C0.5
(2X)
5.7
2.3
0.5
7.2
5.5
93
”
0~0.2
”
97
2.5
0.7
4.6
0.5
1.4
Advanced Analogic Technologies, Inc.
1250 Oakmead Pkwy, Suite 310, Sunnyvale, CA 94086
(408)524-9684 Fax (408)524-9689
6030L.2001.04.0.9
(0.9)
0.6
(3X)
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